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Monte Carlo simulation of mismatch relaxation and island coalescence during heteroepitaxial growth

Author
ROUHANI, M. D1 2 ; MALEK, R1 ; ESTEVE, D1
[1] Laboratoire d'Analyse et d'Architecture des Systèmes, CNRS, 7 ave. Colonel Roche, 31077 Toulouse, France
[2] Laboratoire de Physique des Solides, Univ. Paul Sabatier, 118 Route de Narbonne, 31062 Toulouse, France
Conference title
1997 ICAM/E-MRS Spring Conference, Symposium B: Epitaxial Thin Film Growth and Nanostructures
Conference name
1997 ICAM/E-MRS Spring Conference, Symposium B: Epitaxial Thin Film Growth and Nanostructures (Strasbourg 1997-06-16)
Author (monograph)
RITTER, G (Editor)1 ; MATTHAI, C (Editor)2 ; TAKAI, O (Editor)3
E-MRS, Strasbourg, France (Funder/Sponsor)
Council of Europe, Strasbourg, France (Funder/Sponsor)
Commission of European Communities, Luxembourg, Luxembourg (Funder/Sponsor)
[1] Institute for Semiconductor Physics, Walter-Korsing-Str. 2, 15230 Frankfurt/Oder, Germany
[2] Department of Physics and Astronomy, University of Wales College of Cardiff, P.O. Box 913, Cardiff CF2 3YB, United Kingdom
[3] Department of Materials Processing Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
Source

Thin solid films. 1998, Vol 318, Num 1-2, pp 61-64 ; ref : 25 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Conference Paper
Language
English
Keyword (fr)
Accommodation réseau Coalescence Couche épitaxique Croissance cristalline Etude théorique Facettage Hétéroépitaxie Morphologie Méthode Monte Carlo Relaxation contrainte Relaxation structurale Rugosité Simulation Structure îlot Surface
Keyword (en)
Mismatch lattice Coalescence Epitaxial layers Crystal growth Theoretical study Faceting Heteroepitaxy Morphology Monte Carlo methods Stress relaxation Structure relaxation Roughness Simulation Island structure Surfaces
Keyword (es)
Acomodación red Facetage Heteroepitaxia Relajación estructural
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy

Pacs
8115 Methods of deposition of films and coatings; film growth and epitaxy

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2300901

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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