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Effect of normal and reversed polarizations on optical characteristics of ultraviolet-violet InGaN laser diodes

Author
KUO, Yen-Kuang1 ; HORNG, Syuan-Huei2 ; TSAI, Miao-Chan2 ; YEN, Sheng-Horng3 ; CHANG, Shu-Hsuan4
[1] Department of Physics, National Changhua University of Education, Changhua 500, Taiwan, Province of China
[2] Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan, Province of China
[3] R&D Division, Epistar Co., Ltd., Science-based Industrial Park, Hsinchu 300, Taiwan, Province of China
[4] Department of Industrial Education and Technology, National Changhua University of Education, Changhua 500, Taiwan, Province of China
Source

Optics communications. 2010, Vol 283, Num 19, pp 3698-3702, 5 p ; ref : 23 ref

CODEN
OPCOB8
ISSN
0030-4018
Scientific domain
Electronics; Optics; Telecommunications
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Numerical simulation Piezoelectric devices Semiconductor lasers
Keyword (fr)
Composé ternaire Courant seuil Diode laser Dispositif piézoélectrique Etude théorique Gallium Nitrure Indium Nitrure Laser puits quantique Laser semiconducteur Méthode numérique Propriété optique Puits quantique Simulation numérique 4255P Ga In N InGaN Laser InGaN Laser violet
Keyword (en)
Ternary compounds Threshold current Laser diodes Piezoelectric devices Theoretical study Gallium Nitrides Indium Nitrides Quantum well lasers Semiconductor lasers Numerical method Optical properties Quantum wells Digital simulation Violet lasers
Keyword (es)
Método numérico
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes

Discipline
Physics : optics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
23055647

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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