Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures
- Author
- ADHIKARY, S1 ; HALDER, N1 ; CHAKRABARTI, S1 ; MAJUMDAR, S2 ; RAY, S. K2 ; HERRERA, M3 ; BONDS, M3 ; BROWNING, N. D3
[1] Centre for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
[2] Department of Physics and Meteorology Indian Institute of Technology Kharagpur, Kharagpur 721302, India
[3] Department of Chemical Engineering and Materials Science University of California-Davis, 1153 Kemper Hall, One Shields Avenue, Davis, CA 95616, United States - Source
Journal of crystal growth. 2010, Vol 312, Num 5, pp 724-729, 6 p ; ref : 31 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- A1. Nanostructure A3.Molecular beam epitaxy A3.Quantum dots B2.Semiconducting III―V materials
- Keyword (fr)
- Accommodation réseau Arséniure d'indium Arséniure de gallium Autoassemblage Composé III-V Couche multimoléculaire Diagramme rotation Diffraction RX Diffusion Raman Déplacement fréquence Déplacement raie Epitaxie Hétérostructure Microscopie électronique balayage transmission Mode empilement Multicouche Nanomatériau Nanostructure Phonon Point quantique Propriété mécanique Propriété optique Relaxation contrainte Semiconducteur III-V Spectrométrie Raman Structure cristalline 6166 8107 8107T 8116D GaAs InAlGaAs InAs
- Keyword (en)
- Mismatch lattice Indium arsenides Gallium arsenides Self-assembly III-V compound Multilayer Rocking curve XRD Raman scattering Frequency shift Spectral line shift Epitaxy Heterostructures Scanning transmission electron microscopy Stacking sequence Multilayers Nanostructured materials Nanostructures Phonons Quantum dots Mechanical properties Optical properties Stress relaxation III-V semiconductors Raman spectroscopy Crystal structure
- Keyword (es)
- Acomodación red Compuesto III-V Capa multimolecular Diagrama rotación Difusión Ramán Desplazamiento frecuencia Modo apilamiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A66 Structure of specific crystalline solids
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication / 001B80A16D Self-assembly
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23055801
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2009.11.067 
https://dx.doi.org/10.1016/j.jcrysgro.2009.11.067
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