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Molecular beam epitaxy of ZnCdSe/ZnSe strained quantum-well structures on GaAs(1 1 1)A substrates and piezoelectric properties

Author
MATSUMURA, N1 ; SHIMAKAWA, H1 ; GOTOU, M1 ; SARAIE, J1
[1] Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Kyoto 606, Japan
Conference title
International Conference on II-VI Compounds
Conference name
International Conference on II-VI Compounds (8 ; Grenoble 1997-08-25)
Author (monograph)
COX, R. T (Editor)1 ; CIBERT, J (Editor)2 ; DESTEFANIS, G (Editor)1 ; MARIETTE, H (Editor)2
Université de Grenoble 1, Saint-Martin d'Hères, France (Funder/Sponsor)
Centre national de la recherche scientifique, Paris, France (Funder/Sponsor)
Commissariat à l'énergie atomique, Paris, France (Funder/Sponsor)
[1] CEA, Grenoble, France
[2] CNRS, Université Joseph Fourier, Grenoble, France
Source

Journal of crystal growth. 1998, Vol 184-85, pp 723-727 ; ref : 6 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Cadmium séléniure Champ interne Champ électrique Composé binaire Composé ternaire Couche contrainte Epaisseur Epitaxie jet moléculaire Etude expérimentale Gallium arséniure Matériau semiconducteur Photoluminescence Piézoélectricité Puits quantique Taux croissance Zinc séléniure Cd Se Zn Se Zn ZnCdSe ZnSe Composé minéral Métal transition composé
Keyword (en)
Cadmium selenides Internal field Electric fields Binary compounds Ternary compounds Strained layer Thickness Molecular beam epitaxy Experimental study Gallium arsenides Semiconductor materials Photoluminescence Piezoelectricity Quantum wells Growth rate Zinc selenides Inorganic compounds Transition element compounds
Keyword (es)
Campo interno Capa forzada
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40L Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66H Ii-vi semiconductors

Pacs
7340L Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Pacs
7866H II-VI semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2307541

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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