Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering
- Autor
- FAN, J. C1 ; DING, G. W1 ; FUNG, S1 ; XIE, Z2 ; ZHONG, Y. C3 ; WONG, K. S3 ; BRAUER, G4 ; ANWAND, W4 ; GRAMBOLE, D5 ; LING, C. C1
[1] Department of Physics, The University of Hong Kong, Pokfulam Road, Hong-Kong
[2] College of Physics and Microelectronic Science, Hunan University, Changsha 410082, China
[3] Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong-Kong
[4] Institut für Strahlenphysik, Forschungszentrum Dresden-Rossendorf, Postfach 510119, 01314 Dresden, Germany
[5] Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, Postfach 510119, 01314 Dresden, Germany - Fuente
Semiconductor science and technology. 2010, Vol 25, Num 8 ; 085009.1-085009.5 ; ref : 36 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Campo Científico
- Electronics; Optics; Condensed state physics
- Editor
- Institute of Physics, Bristol
- País de la publicación
- United Kingdom
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Addition hydrogène Centre accepteur Diffraction RX Dopage Effet Hall Impureté Magnésium Zinc Oxyde Mixte Niveau peu profond Photoluminescence Pulvérisation cathodique Radiofréquence Température substrat Transition conductivité électrique
- Palabra clave (in)
- Hydrogen additions Acceptor center XRD Doping Hall effect Impurities Magnesium Zinc Oxides Mixed Shallow level Photoluminescence Cathode sputtering Radiofrequency Substrat temperature Electrical conductivity transitions
- Palabra clave (es)
- Centro aceptor Doping Mixto Nivel poco profundo Radiofrecuencia Temperatura substrato
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61L Other inorganic semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66L Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Disciplina
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 23084073
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Acceso al documento
Install on your browser
DOI
10.1088/0268-1242/25/8/085009 
https://dx.doi.org/10.1088/0268-1242/25/8/085009
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1088\/0268-1242\/25\/8\/085009\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:120:\"Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"085009.1-085009.5\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"FAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:10:\"DING, G. W\";i:1;s:7:\"FUNG, S\";i:2;s:6:\"XIE, Z\";i:3;s:11:\"ZHONG, Y. C\";i:4;s:10:\"WONG, K. S\";i:5;s:9:\"BRAUER, G\";i:6;s:9:\"ANWAND, W\";i:7;s:11:\"GRAMBOLE, D\";i:8;s:10:\"LING, C. C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:120:\"Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Panist
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1088\/0268-1242\/25\/8\/085009\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:120:\"Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"085009.1-085009.5\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"FAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:10:\"DING, G. W\";i:1;s:7:\"FUNG, S\";i:2;s:6:\"XIE, Z\";i:3;s:11:\"ZHONG, Y. C\";i:4;s:10:\"WONG, K. S\";i:5;s:9:\"BRAUER, G\";i:6;s:9:\"ANWAND, W\";i:7;s:11:\"GRAMBOLE, D\";i:8;s:10:\"LING, C. C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:120:\"Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Istex
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:29:\"10.1088\/0268-1242\/25\/8\/085009\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Acceso mediante Unpaywall
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1088\/0268-1242\/25\/8\/085009\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:120:\"Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"085009.1-085009.5\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"FAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:10:\"DING, G. W\";i:1;s:7:\"FUNG, S\";i:2;s:6:\"XIE, Z\";i:3;s:11:\"ZHONG, Y. C\";i:4;s:10:\"WONG, K. S\";i:5;s:9:\"BRAUER, G\";i:6;s:9:\"ANWAND, W\";i:7;s:11:\"GRAMBOLE, D\";i:8;s:10:\"LING, C. C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:120:\"Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Europe PubMed Central
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1088\/0268-1242\/25\/8\/085009\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:120:\"Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"085009.1-085009.5\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"FAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:10:\"DING, G. W\";i:1;s:7:\"FUNG, S\";i:2;s:6:\"XIE, Z\";i:3;s:11:\"ZHONG, Y. C\";i:4;s:10:\"WONG, K. S\";i:5;s:9:\"BRAUER, G\";i:6;s:9:\"ANWAND, W\";i:7;s:11:\"GRAMBOLE, D\";i:8;s:10:\"LING, C. C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:120:\"Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Base Search
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1088\/0268-1242\/25\/8\/085009\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:120:\"Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"25\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"085009.1-085009.5\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"FAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:10:\"DING, G. W\";i:1;s:7:\"FUNG, S\";i:2;s:6:\"XIE, Z\";i:3;s:11:\"ZHONG, Y. C\";i:4;s:10:\"WONG, K. S\";i:5;s:9:\"BRAUER, G\";i:6;s:9:\"ANWAND, W\";i:7;s:11:\"GRAMBOLE, D\";i:8;s:10:\"LING, C. C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:120:\"Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante arXiv
