(SiC)x(AlN)1-x Solid-Solution Substrate for High Temperature and High Power Devices
- Author
- SINGH, Narsingh B1 ; WAGNER, Brian1 ; BERGHMANS, Andre1 ; KNUTESON, David J1 ; MCLAUGHLIN, Sean1 ; KAHLER, David1 ; THOMSON, Darren1 ; KING, Matthew1
[1] Northrop Grumman Corporation, ES- ATL, 1212 Winterson Road, Linthicum, Maryland 21090, United States - Source
Crystal growth & design. 2010, Vol 10, Num 8, pp 3508-3514, 7 p ; ref : 12 ref
- ISSN
- 1528-7483
- Scientific domain
- Crystallography
- Publisher
- American Chemical Society, Washington,DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Allotropie Carbure de silicium Composé III-V Couche mince Couche épitaxique Croissance cristalline en phase vapeur Croissance cristalline Croissance grain Diagramme rotation Diffraction RX Dépôt physique phase vapeur Epitaxie Microscopie électronique balayage Morphologie Mécanisme croissance Méthode MOCVD Nitrure d'aluminium Nitrure de gallium Nucléation Photoluminescence Réseau hexagonal Semiconducteur III-V Silicium Solution solide Structure cristalline 8110 8110A 8110B 8115C AlN GaN Si SiC Substrat SiC
- Keyword (en)
- Allotropy Silicon carbide III-V compound Thin films Epitaxial layers Crystal growth from vapors Crystal growth Grain growth Rocking curve XRD Physical vapor deposition Epitaxy Scanning electron microscopy Morphology Growth mechanism MOCVD Aluminium nitride Gallium nitride Nucleation Photoluminescence Hexagonal lattices III-V semiconductors Silicon Solid solutions Crystal structure
- Keyword (es)
- Silicio carburo Compuesto III-V Diagrama rotación Mecanismo crecimiento Aluminio nitruro Galio nitruro
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10B Growth from vapor
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23084281
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1021/cg100395a 
https://dx.doi.org/10.1021/cg100395a
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/cg100395a\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:83:\"(SiC)x(AlN)1-x Solid-Solution Substrate for High Temperature and High Power Devices\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Crystal growth & design\";s:9:\"\u0000*\u0000stitle\";s:17:\"Cryst. growth des\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"10\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"3508\";s:8:\"\u0000*\u0000epage\";s:4:\"3514\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1528-7483\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SINGH\";s:10:\"\u0000*\u0000aufirst\";s:10:\"Narsingh B\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"WAGNER, Brian\";i:1;s:16:\"BERGHMANS, Andre\";i:2;s:17:\"KNUTESON, David J\";i:3;s:16:\"MCLAUGHLIN, Sean\";i:4;s:13:\"KAHLER, David\";i:5;s:15:\"THOMSON, Darren\";i:6;s:13:\"KING, Matthew\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:83:\"(SiC)x(AlN)1-x Solid-Solution Substrate for High Temperature and High Power Devices\";s:8:\"\u0000*\u0000place\";s:13:\"Washington,DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/cg100395a\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:83:\"(SiC)x(AlN)1-x Solid-Solution Substrate for High Temperature and High Power Devices\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Crystal growth & design\";s:9:\"\u0000*\u0000stitle\";s:17:\"Cryst. growth des\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"10\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"3508\";s:8:\"\u0000*\u0000epage\";s:4:\"3514\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1528-7483\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SINGH\";s:10:\"\u0000*\u0000aufirst\";s:10:\"Narsingh B\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"WAGNER, Brian\";i:1;s:16:\"BERGHMANS, Andre\";i:2;s:17:\"KNUTESON, David J\";i:3;s:16:\"MCLAUGHLIN, Sean\";i:4;s:13:\"KAHLER, David\";i:5;s:15:\"THOMSON, Darren\";i:6;s:13:\"KING, Matthew\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:83:\"(SiC)x(AlN)1-x Solid-Solution Substrate for High Temperature and High Power Devices\";s:8:\"\u0000*\u0000place\";s:13:\"Washington,DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/cg100395a\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/cg100395a\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:83:\"(SiC)x(AlN)1-x Solid-Solution Substrate for High Temperature and High Power Devices\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Crystal growth & design\";s:9:\"\u0000*\u0000stitle\";s:17:\"Cryst. growth des\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"10\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"3508\";s:8:\"\u0000*\u0000epage\";s:4:\"3514\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1528-7483\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SINGH\";s:10:\"\u0000*\u0000aufirst\";s:10:\"Narsingh B\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"WAGNER, Brian\";i:1;s:16:\"BERGHMANS, Andre\";i:2;s:17:\"KNUTESON, David J\";i:3;s:16:\"MCLAUGHLIN, Sean\";i:4;s:13:\"KAHLER, David\";i:5;s:15:\"THOMSON, Darren\";i:6;s:13:\"KING, Matthew\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:83:\"(SiC)x(AlN)1-x Solid-Solution Substrate for High Temperature and High Power Devices\";s:8:\"\u0000*\u0000place\";s:13:\"Washington,DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/cg100395a\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:83:\"(SiC)x(AlN)1-x Solid-Solution Substrate for High Temperature and High Power Devices\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Crystal growth & design\";s:9:\"\u0000*\u0000stitle\";s:17:\"Cryst. growth des\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"10\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"3508\";s:8:\"\u0000*\u0000epage\";s:4:\"3514\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1528-7483\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SINGH\";s:10:\"\u0000*\u0000aufirst\";s:10:\"Narsingh B\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"WAGNER, Brian\";i:1;s:16:\"BERGHMANS, Andre\";i:2;s:17:\"KNUTESON, David J\";i:3;s:16:\"MCLAUGHLIN, Sean\";i:4;s:13:\"KAHLER, David\";i:5;s:15:\"THOMSON, Darren\";i:6;s:13:\"KING, Matthew\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:83:\"(SiC)x(AlN)1-x Solid-Solution Substrate for High Temperature and High Power Devices\";s:8:\"\u0000*\u0000place\";s:13:\"Washington,DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/cg100395a\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:83:\"(SiC)x(AlN)1-x Solid-Solution Substrate for High Temperature and High Power Devices\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Crystal growth & design\";s:9:\"\u0000*\u0000stitle\";s:17:\"Cryst. growth des\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"10\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"3508\";s:8:\"\u0000*\u0000epage\";s:4:\"3514\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1528-7483\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SINGH\";s:10:\"\u0000*\u0000aufirst\";s:10:\"Narsingh B\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:13:\"WAGNER, Brian\";i:1;s:16:\"BERGHMANS, Andre\";i:2;s:17:\"KNUTESON, David J\";i:3;s:16:\"MCLAUGHLIN, Sean\";i:4;s:13:\"KAHLER, David\";i:5;s:15:\"THOMSON, Darren\";i:6;s:13:\"KING, Matthew\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:83:\"(SiC)x(AlN)1-x Solid-Solution Substrate for High Temperature and High Power Devices\";s:8:\"\u0000*\u0000place\";s:13:\"Washington,DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
