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Effect of film thickness on the optical constants and optical absorption properties of NiOx thin films

Author
YING ZHOU1 2 ; YONGYOU GENG1 ; DONGHONG GU1 ; WEIBING GU1 2 ; ZHI JIANG1 2
[1] Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
[2] Graduate School of the Chinese Academy of Sciences, Beijing 100049, China
Source

Physica. B, Condensed matter. 2010, Vol 405, Num 18, pp 3875-3878, 4 p ; ref : 24 ref

ISSN
0921-4526
Scientific domain
Crystallography; Condensed state physics
Publisher
Elsevier, Kidlington
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
Annealing Film thickness NiOx thin films Optical band gap Optical constants
Keyword (fr)
Bande interdite Constante optique Couche mince Epaisseur Facteur réflexion Indice extinction Indice réfraction Oxyde de nickel Pulvérisation cathodique Pulvérisation réactive Recuit Spectre absorption Transition permise
Keyword (en)
Energy gap Optical constants Thin films Thickness Reflectivity Extinction index Refractive index Nickel oxide Cathode sputtering Reactive sputtering Annealing Absorption spectra Allowed transition
Keyword (es)
Níquel óxido Transición permitida
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66L Other semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
23117603

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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