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Molecular Beam Epitaxial Growth, Fabrication, and Characterization of InN/Si Nanowire Heterojunction Solar Cells

Author
CHANG, Yi-Lu1 ; ZETIAN MI1
[1] Department of Electrical and Computer Engineering, McGill University, 3480 University Street Montreal, Quebec H3A 2A7, Canada
Conference title
Gallium nitride materials and devices V (25-28 January 2010, San Francisco, California, United States)
Conference name
Gallium nitride materials and devices (05 ; San Francisco CA 2010)
Author (monograph)
Chyi, Jen-Inn (Editor)
SPIE, United States (Organiser of meeting)
Source

Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602 ; 1Vol ; 76020A.1-76020A.8 ; ref : 30 ref

CODEN
PSISDG
ISSN
0277-786X
ISBN
0-8194-7998-5 978-0-8194-7998-3
Scientific domain
Crystallography; Electronics; Optics; Physics
Publisher
SPIE, Bellingham, Wash
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Cellule solaire Densité courant Epitaxie jet moléculaire Etude expérimentale Gallium nitrure Hétérojonction Matériau optique Nanofil Procédé fabrication 0130C 4270N Substrat Silicium
Keyword (en)
Solar cells Current density Molecular beam epitaxy Experimental study Gallium nitrides Heterojunctions Optical materials Nanowires Manufacturing processes
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00A Communication, education, history, and philosophy / 001B00A30 Physics literature and publications / 001B00A30C Conference proceedings

Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B70 Optical materials / 001B40B70N Other nonlinear optical materials; photorefractive and semiconductor materials

Discipline
Physics : optics Theoretical physics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
23155298

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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