2041.3 nm/2054.6 nm Simultaneous Dual-Wavelength Single-Longitudinal-Mode Tm, Ho:YVO4 Microchip Laser'
- Author
- ZHANG, C. H1 ; YAO, B. Q1 ; LI, G1 ; WANG, Q1 ; JU, Y. L1 ; WANG, Y. Z1
[1] National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin, 150001, China - Source
Laser physics. 2010, Vol 20, Num 7, pp 1564-1567, 4 p ; ref : 19 ref
- ISSN
- 1054-660X
- Scientific domain
- Metrology and instrumentation; Optics
- Publisher
- Springer, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition thulium Composé ternaire Matériau dopé Mode longitudinal unique Pompage par diode Puissance sortie Yttrium Vanadate 4255X O V Y YVO4:Tm
- Keyword (en)
- Thulium additions Ternary compounds Doped materials Single longitudinal mode Diode pumping Output power Yttrium Vanadates
- Keyword (es)
- Modo longitudinal único Bombeo por diodo Potencia salida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55X Diode-pumped lasers
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23199037
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1134/S1054660X10130190 
https://dx.doi.org/10.1134/S1054660X10130190
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