205-GHz (Al,In)N/GaN HEMTs
- Author
- HAIFENG SUN1 ; ALT, Andreas R1 ; BENEDICKTER, Hansruedi1 ; FELTIN, Eric2 ; CARLIN, Jean-François2 ; GONSCHOREK, Marcus2 ; GRANDJEAN, Nicolas R2 ; BOLOGNESI, C. R1
[1] Millimeter-Wave Electronics Group, ETH-Zürich, 8092 Zürich, Switzerland
[2] Institute of Quantum Electronics and Photonics, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland - Source
IEEE electron device letters. 2010, Vol 31, Num 9, pp 957-959, 3 p ; ref : 17 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- AlInN/GaN high-electron-mobility transistor (HEMT) millimeter-wave transistors
- Keyword (fr)
- Champ intense Courant court circuit Densité courant Etat actuel Etude comparative Fréquence coupure Gain Température ambiante Transconductance Transistor mobilité électron élevée Transistor onde millimétrique Transistor hyperfréquence
- Keyword (en)
- High field Short circuit currents Current density State of the art Comparative study Cut off frequency Gain Room temperature Transconductance High electron mobility transistor Millimeter wave transistors Microwave transistor
- Keyword (es)
- Campo intenso Densidad corriente Estado actual Estudio comparativo Frecuencia corte Ganancia Temperatura ambiente Transconductancia Transistor movibilidad elevada electrones Transistor hiperfrecuencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F08 Microwave and submillimeter wave devices, electron transfer devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23213051
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2010.2055826 
https://dx.doi.org/10.1109/LED.2010.2055826
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