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Effect of etching parameters on antireflection properties of Si subwavelength grating structures for solar cell applications

Author
LEEM, J. W1 ; SONG, Y. M2 ; LEE, Y. T2 ; YU, J. S1
[1] Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Korea, Republic of
[2] Department of Information and Communications, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea, Republic of
Source

Applied physics. B, Lasers and optics (Print). 2010, Vol 100, Num 4, pp 891-896, 6 p ; ref : 21 ref

ISSN
0946-2171
Scientific domain
Optics
Publisher
Springer, Heidelberg
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Cellule solaire Etude théorique Facteur réflexion Gravure plasma Lithographie Silicium Théorie onde couplée 8460J Sub longueur onde Substrat Silicium
Keyword (en)
Solar cell Theoretical study Reflectance Plasma etching Lithography Silicon Coupled wave theory Subwavelength
Keyword (es)
Célula solar Estudio teórico Coeficiente reflexión Grabado plasma Litografía Silicio Teoría onda acoplada
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells

Discipline
Energy
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
23217099

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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