Effect of La modification on antiferroelectricity and dielectric phase transition in sol―gel grown PbZrO3 thin films
- Author
- PARUI, Jayanta1 ; KRUPANIDHI, S. B1
[1] Materials Research Centre, Indian Institute of Science, Bangalore 560012, India - Source
Solid state communications. 2010, Vol 150, Num 37-38, pp 1755-1759, 5 p ; ref : 20 ref
- CODEN
- SSCOA4
- ISSN
- 0038-1098
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- A. Antiferroelectrics A. Thin films B. Sol―gel synthesis D. Phase transition
- Keyword (fr)
- Addition lanthane Antiferroélectricité Concentration impureté Constante diélectrique Couche mince Effet température Hystérésis ferroélectrique Procédé sol gel Zirconate de plomb PbZrO3
- Keyword (en)
- Lanthanum additions Antiferroelectricity Impurity density Permittivity Thin films Temperature effects Ferroelectric hysteresis Sol-gel process Lead zirconates
- Keyword (es)
- Concentración impureza Histéresis ferroeléctrica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70G Dielectrics, piezoelectrics, and ferroelectrics and their properties / 001B70G80 Ferroelectricity and antiferroelectricity / 001B70G80B Phase transitions and curie point
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70G Dielectrics, piezoelectrics, and ferroelectrics and their properties / 001B70G80 Ferroelectricity and antiferroelectricity / 001B70G80D Domain structure; hysteresis
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23217648
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.ssc.2010.07.024 
https://dx.doi.org/10.1016/j.ssc.2010.07.024
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