Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene
- Author
- GUANGYU XU1 ; TORRES, Carlos M1 ; YUEGANG ZHANG2 ; FEI LIU3 ; SONG, Emil B1 ; MINSHENG WANG1 ; YI ZHOU1 ; CAIFU ZENG1 ; WANG, Kang L1
[1] Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States
[2] Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley,California 94720, United States
[3] IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States - Source
Nano letters (Print). 2010, Vol 10, Num 9, pp 3312-3317, 6 p ; ref : 39 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Bicouche Bruit basse fréquence Electrode commande Graphène Rapport signal bruit Tellurure de gallium 8105U
- Keyword (en)
- Bilayers 1/f noise Gates Graphene Signal-to-noise ratio Gallium tellurides
- Keyword (es)
- Graphene
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05T Fullerenes and related materials; diamonds, graphite
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23218098
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl100985z 
https://dx.doi.org/10.1021/nl100985z
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