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Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene

Author
GUANGYU XU1 ; TORRES, Carlos M1 ; YUEGANG ZHANG2 ; FEI LIU3 ; SONG, Emil B1 ; MINSHENG WANG1 ; YI ZHOU1 ; CAIFU ZENG1 ; WANG, Kang L1
[1] Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States
[2] Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley,California 94720, United States
[3] IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States
Source

Nano letters (Print). 2010, Vol 10, Num 9, pp 3312-3317, 6 p ; ref : 39 ref

ISSN
1530-6984
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
American Chemical Society, Washington, DC
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Bicouche Bruit basse fréquence Electrode commande Graphène Rapport signal bruit Tellurure de gallium 8105U
Keyword (en)
Bilayers 1/f noise Gates Graphene Signal-to-noise ratio Gallium tellurides
Keyword (es)
Graphene
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05T Fullerenes and related materials; diamonds, graphite

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
23218098

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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