Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
- Author
- WEI GUO1 ; MENG ZHANG1 ; BANERJEE, Animesh1 ; BHATTACHARYA, Pallab1
[1] Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122, United States - Source
Nano letters (Print). 2010, Vol 10, Num 9, pp 3355-3359, 5 p ; ref : 29 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition azote Catalyseur Composé III-V Diode électroluminescente Dispositif nanofil Dispositif optoélectronique Durée vie radiative Effet Stark confinement quantique Electroluminescence Epitaxie jet moléculaire Microscopie électronique transmission Mécanisme croissance Nanofil Nanomatériau Nanoélectronique Nitrure d'indium Nitrure de gallium Photoluminescence Rendement quantique Résolution temporelle Semiconducteur III-V Silicium Spectre résolution temporelle Synthèse nanomatériau Traitement par plasma 8116H 8535 8535K 8560J GaN InGaN Si Substrat silicium
- Keyword (en)
- Nitrogen additions Catalysts III-V compound Light emitting diodes Nanowire device Optoelectronic devices Radiative lifetimes Quantum confined Stark effect Electroluminescence Molecular beam epitaxy Transmission electron microscopy Growth mechanism Nanowires Nanostructured materials Nanoelectronics Indium nitride Gallium nitride Photoluminescence Quantum yield Time resolution III-V semiconductors Silicon Time resolved spectra Nanomaterial synthesis Plasma assisted processing
- Keyword (es)
- Compuesto III-V Dispositivo nanohilo Mecanismo crecimiento Indio nitruro Galio nitruro Síntesis nanomaterial
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication / 001B80A16H Catalytic methods
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23218105
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl101027x 
https://dx.doi.org/10.1021/nl101027x
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