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Barrier height determination for n-type 4H-SiC schottky contacts made using various metals

Author
YAKIMOVA, R1 ; HEMMINGSSON, C1 ; MACMILLAN, M. F1 ; YAKIMOV, T1 ; JANZEN, E1
[1] Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden
Source

Journal of electronic materials. 1998, Vol 27, Num 7, pp 871-875 ; ref : 17 ref

CODEN
JECMA5
ISSN
0361-5235
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Barrière Schottky Chrome Etat défaut Etat interface Etude expérimentale Hauteur barrière Molybdène Nickel Or Piège Silicium carbure Tantale Travail sortie Tungstène Au C Si Cr Mo Ni SiC Ta W
Keyword (en)
Schottky barriers Chromium Defect states Interface states Experimental study Barrier height Molybdenum Nickel Gold Traps Silicon carbides Tantalum Work functions Tungsten
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C30 Surface double layers, schottky barriers, and work functions

Pacs
7330 Surface double layers, Schottky barriers, and work functions

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2326276

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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