Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor
- Author
- CHEK, Desmond C. Y1 ; TAN, Michael L. P1 2 ; MOHAMMAD TAGHI AHMADI1 ; ISMAIL, Razali1 ; ARORA, Vijay K1 3
[1] Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
[2] Electrical Engineering Division, Engineering Department, University of Cambridge, 9 J.J. Thomson, Avenue, Cambridge CB3 0FA, United Kingdom
[3] Division of Engineering and Physics, Wilkes University, Wilkes-Barre, PA 18766, United States - Source
Microelectronics journal. 2010, Vol 41, Num 9, pp 579-584, 6 p ; ref : 27 ref
- ISSN
- 0959-8324
- Scientific domain
- Electronics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- 80 nm CNFET Analytical device modeling Carbon nanotube High mobility Inverter Low mobility SPICE
- Keyword (fr)
- Analyse comportementale Barrière potentiel Conception compacte Densité porteur charge Dispositif nanotube Evaluation performance Gain Haute performance Mobilité porteur charge Modélisation Nanotube carbone Nanotube monofeuillet Nanoélectronique Onduleur(convertisseur statique) Phénomène transport Programme SPICE Semiconducteur type n Semiconducteur type p Transistor MOSFET Transistor effet champ 8107D 8530T 8535 8535K Nanotube de type zig zag
- Keyword (en)
- Behavioral analysis Potential barrier Compact design Carrier density Nanotube devices Performance evaluation Gain High performance Carrier mobility Modelling Carbon nanotubes Singlewalled nanotube Nanoelectronics Inverters Transport processes SPICE n type semiconductor p type semiconductor MOSFET Field effect transistors Zig zag nanotube
- Keyword (es)
- Análisis conductual Concepción compacta Alto rendimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07D Nanotubes
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23263589
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mejo.2010.05.008 
https://dx.doi.org/10.1016/j.mejo.2010.05.008
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