Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films
- Author
- CHANG EUN KIM1 ; MOON, Pyung1 ; KIM, Sungyeon2 ; MYOUNG, Jae-Min2 ; HYEON WOO JANG3 ; BANG, Jungsik3 ; YUN, Ilgu1
[1] Department of Electrical and Electronic Engineering, Yonsei University, 262, Seongsanno, Seodaemoongu, Seoul, 120-749, Korea, Republic of
[2] Department of Materials Science and Engineering, Yonsei University, 262, Seongsanno, Seodaemoongu, Seoul, 120-749, Korea, Republic of
[3] LG Chem, Ltd./Research Park, 104-1 Moonji-Dong, Yuseng-Gu, Daejeon 305-380, Korea, Republic of - Source
Thin solid films. 2010, Vol 518, Num 22, pp 6304-6307, 4 p ; ref : 17 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Bandgap narrowing Burstein-Moss effect Carrier concentration Modified BM equation ZnO:Ga thin film
- Keyword (fr)
- Addition gallium Bande interdite Couche mince Densité porteur charge Déplacement raie Déplacement vers le bleu Effet de Burstein Moss Gallium Hydrogène 1 Oxyde de zinc Pulvérisation irradiation 8115C Substrat verre ZnO
- Keyword (en)
- Gallium additions Energy gap Thin films Carrier density Spectral line shift Blue shift Burstein Moss effect Gallium Hydrogen 1 Zinc oxide Sputtering
- Keyword (es)
- Efecto Burstein Moss Zinc óxido
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23264784
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2010.03.042 
https://dx.doi.org/10.1016/j.tsf.2010.03.042
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