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Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films

Author
CHANG EUN KIM1 ; MOON, Pyung1 ; KIM, Sungyeon2 ; MYOUNG, Jae-Min2 ; HYEON WOO JANG3 ; BANG, Jungsik3 ; YUN, Ilgu1
[1] Department of Electrical and Electronic Engineering, Yonsei University, 262, Seongsanno, Seodaemoongu, Seoul, 120-749, Korea, Republic of
[2] Department of Materials Science and Engineering, Yonsei University, 262, Seongsanno, Seodaemoongu, Seoul, 120-749, Korea, Republic of
[3] LG Chem, Ltd./Research Park, 104-1 Moonji-Dong, Yuseng-Gu, Daejeon 305-380, Korea, Republic of
Source

Thin solid films. 2010, Vol 518, Num 22, pp 6304-6307, 4 p ; ref : 17 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Bandgap narrowing Burstein-Moss effect Carrier concentration Modified BM equation ZnO:Ga thin film
Keyword (fr)
Addition gallium Bande interdite Couche mince Densité porteur charge Déplacement raie Déplacement vers le bleu Effet de Burstein Moss Gallium Hydrogène 1 Oxyde de zinc Pulvérisation irradiation 8115C Substrat verre ZnO
Keyword (en)
Gallium additions Energy gap Thin films Carrier density Spectral line shift Blue shift Burstein Moss effect Gallium Hydrogen 1 Zinc oxide Sputtering
Keyword (es)
Efecto Burstein Moss Zinc óxido
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
23264784

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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