Superconformal copper filling of a nano-scale trench by nucleation suppression at the trench entrance during metal organic chemical vapor deposition
- Autor
- MOON, H. K1 ; KIM, S. I1 ; JO, S. K2 ; JUNG, M. B2 ; LEE, N.-E1
[1] School of Advanced Materials Science and Engineering, Center for Advanced Plasma Surface Technology, and Center for Human Interface Nanotechnology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea, Republic of
[2] Department of Chemistry, Kyung Won University, SungNam, Kyunggi-do 461-701, Korea, Republic of - Fuente
Thin solid films. 2010, Vol 518, Num 22, pp 6455-6459, 5 p ; ref : 8 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Campo Científico
- Crystallography; Metallurgy, welding; Condensed state physics
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- Copper(Cu) Direct filling Gap filling Interconnect MOCVD Plasma treatment Superconformal filling
- Palabra clave (fr)
- Cavité dans réseau Condition opératoire Cuivre Défaut cristallin Dépôt pulvérisation Méthode MOCVD Nucléation Oxyde de silicium Phosphure de gallium Prétraitement Quartz Réacteur plasma Silice Silicium Traitement par plasma 6172Q 6855A 8115C 8115G GaP Si SiO2
- Palabra clave (in)
- Voids Operating conditions Copper Crystal defects Sputter deposition MOCVD Nucleation Silicon oxides Gallium phosphide Pretreatment Quartz Plasma reactor Silica Silicon Plasma assisted processing
- Palabra clave (es)
- Condición operatoria Galio fosfuro Pretratamiento Reactor plasma
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Q Microscopic defects (voids, inclusions, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Disciplina
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 23264818
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2010.04.059 
https://dx.doi.org/10.1016/j.tsf.2010.04.059
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