Effect of interface states on sub-threshold response of III-V MOSFETs, MOS HEMTs and tunnel FETs
- Author
- KAO, W. C1 ; ALI, A1 ; HWANG, E1 ; MOOKERJEA, S1 ; DATTA, S1
[1] The Pennsylvania State University, University Park, PA 16802, United States - Source
Solid-state electronics. 2010, Vol 54, Num 12, pp 1665-1668, 4 p ; ref : 6 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- HEMT InGaAs Interface states MOSFET Tunnel FET
- Keyword (fr)
- Caractéristique courant tension Composé III-V Densité état Endommagement Etat interface Mobilité dérive Niveau Fermi Simulateur Transistor MOSFET Transistor effet champ Transistor mobilité électron élevée
- Keyword (en)
- Voltage current curve III-V compound Density of states Damaging Interface state Drift mobility Fermi level Simulator MOSFET Field effect transistor High electron mobility transistor
- Keyword (es)
- Característica corriente tensión Compuesto III-V Densidad estado Deterioración Estado interfase Movilidad deriva Nivel Fermi Simulador Transistor efecto campo Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23302844
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2010.07.018 
https://dx.doi.org/10.1016/j.sse.2010.07.018
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