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2d numerical simulations of an electron―phonon hydrodynamical model based on the maximum entropy principle

Author
ROMANO, Vittorio1 ; RUSAKOV, Alexander2
[1] Dipartimento di Matematica e Informatica, Università di Catania, Viale A.Doria 6, 95125 Catania, Italy
[2] Fachbereich C. University of Wuppertal, Gauss str. 20 and Qimonda AG, Germany
Source

Computer methods in applied mechanics and engineering. 2010, Vol 199, Num 41-44, pp 2741-2751, 11 p ; ref : 30 ref

CODEN
CMMECC
ISSN
0045-7825
Scientific domain
Computer science; Mechanics acoustics
Publisher
Elsevier, Kidlington
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
Energy-transport models Maximum entropy principle Semiconductors
Keyword (fr)
Autoéchauffement Chauffage Interaction électron phonon Mobilité électron Modèle hydrodynamique Modélisation Méthode entropie maximum Nanostructure Phénomène transport Propriété électrique Réseau cristallin Semiconducteur Source chaleur Technologie MOS Théorie transport Transistor MOSFET Transistor effet champ
Keyword (en)
Self heating Space heating Electron-phonon interactions Electron mobility Hydrodynamic model Modelling Maximum entropy methods Nanostructures Transport processes Electrical properties Crystal lattices Semiconductor materials Heat sources MOS technology Transport theory MOSFET Field effect transistors
Keyword (es)
Autocalentamiento Tecnología MOS
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
23347077

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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