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Effect of barrier layer composition and thickness on structural and optical properties of TlInGaAsN/TlGaAs(N) triple quantum wells

Author
KANG MIN KIM1 ; KRISHNAMURTHY, Daivasigamani1 ; SAKAI, Yuji1 ; SEO, Jong-Uk1 ; HASEGAWA, Shigehiko1 ; ASAHI, Hajime1
[1] The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan
Source

Journal of materials science. Materials in electronics. 2010, Vol 21, Num 10, pp 1024-1029, 6 p ; ref : 22 ref

ISSN
0957-4522
Scientific domain
Electronics; Condensed state physics
Publisher
Springer, Norwell, MA
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Caractéristique optique Couche barrière Epaisseur Fabrication microélectronique Interface Luminescence Matériau cristallin Modulation Méthode GSMBE Photoluminescence Propriété optique Puits quantique Température ambiante 7867 8107S 8540H
Keyword (en)
Optical characteristic Barrier layer Thickness Microelectronic fabrication Interfaces Luminescence Crystalline material Modulation GSMBE method Photoluminescence Optical properties Quantum wells Ambient temperature
Keyword (es)
Característica óptica Fabricación microeléctrica Material cristalino Método GSMBE
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07S Quantum wells

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices

Discipline
Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
23362777

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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