Effect of barrier layer composition and thickness on structural and optical properties of TlInGaAsN/TlGaAs(N) triple quantum wells
- Author
- KANG MIN KIM1 ; KRISHNAMURTHY, Daivasigamani1 ; SAKAI, Yuji1 ; SEO, Jong-Uk1 ; HASEGAWA, Shigehiko1 ; ASAHI, Hajime1
[1] The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan - Source
Journal of materials science. Materials in electronics. 2010, Vol 21, Num 10, pp 1024-1029, 6 p ; ref : 22 ref
- ISSN
- 0957-4522
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Norwell, MA
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique optique Couche barrière Epaisseur Fabrication microélectronique Interface Luminescence Matériau cristallin Modulation Méthode GSMBE Photoluminescence Propriété optique Puits quantique Température ambiante 7867 8107S 8540H
- Keyword (en)
- Optical characteristic Barrier layer Thickness Microelectronic fabrication Interfaces Luminescence Crystalline material Modulation GSMBE method Photoluminescence Optical properties Quantum wells Ambient temperature
- Keyword (es)
- Característica óptica Fabricación microeléctrica Material cristalino Método GSMBE
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07S Quantum wells
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23362777
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s10854-010-0104-0 
https://dx.doi.org/10.1007/s10854-010-0104-0
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