Bases de datos bibliográficos Pascal y Francis

Ayuda

Exportación

Selección :

Enlace permanente
http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23383640

Room-Temperature Preparation of High-Transparency Low-Resistivity ITO Films by Ion Beam Sputtering

Autor
SHEN, Jung-Hsiung1 ; YEH, Sung-Wei1 ; DERSHIN GAN1 ; KOHO YANG2 ; HUANG, Hsing-Lu3 ; MAO, Shih-Wei3
[1] Department of Materials and Optoelectronic Science; Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, Province of China
[2] Department of Mold and Die Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 80778, Taiwan, Province of China
[3] Department of Mechanical Engineering, R.O.C. Military Academy, Kaohsiung 83059, Taiwan, Province of China
Fuente

Journal of electronic materials. 2010, Vol 39, Num 10, pp 2352-2358, 7 p ; ref : 32 ref

CODEN
JECMA5
ISSN
0361-5235
Campo Científico
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Editor
Springer, Heidelberg
País de la publicación
Germany
Tipo de documento
Article
Idioma
English
Palabra clave de autor
Tin-doped In2O3 (ITO) ion beam sputtering (IBS) resistivity transparency
Palabra clave (fr)
Addition étain Coefficient absorption Conductivité électrique Couche mince Dispositif optoélectronique Effet Hall Effet concentration Facteur transmission Haute température Mobilité porteur charge Oxyde d'indium Oxyde d'étain Pulvérisation faisceau ionique Pulvérisation haute fréquence Rayonnement visible Résistivité couche Résistivité électrique Transparence 7361L 8115J In2O3
Palabra clave (in)
Tin additions Absorption coefficients Electrical conductivity Thin films Optoelectronic devices Hall effect Quantity ratio Transmittance High temperature Carrier mobility Indium oxide Tin oxide Ion beam sputtering Radiofrequency sputtering Visible radiation Sheet resistivity Electric resistivity Transparency
Palabra clave (es)
Factor transmisión Alta temperatura Indio óxido Estaño óxido Pulverización haz iónico Pulverización alta frecuencia
Clasificación
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61L Other inorganic semiconductors

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15J Ion and electron beam-assisted deposition; ion plating

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Disciplina
Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Procedencia
Inist-CNRS
Base de datos
PASCAL
Identificador INIST
23383640

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Acceso al documento

Buscar en la web