The Power Factor of Bi2-xTlxSe3 Single Crystals
- Author
- JANICEK, P1 ; DRASAR, C1 ; BENES, L2 ; LOSTAK, P1
[1] Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice, Czech Republic
[2] Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry of the Academy of Sciences of the Czech Republic and the University of Pardubice, Studentska 84, 532 10 Pardubice, Czech Republic - Conference title
- International Conference on Thermoelectrics 2009
- Conference name
- ECT 2009 (7 ; Freiburg 2009-07-26) = ICT 2009 (28 ; Freiburg 2009-07-26)
- Author (monograph)
- BÖTTNER, Harald (Editor)1 ; YANG, Jihui (Editor)2 ; JOHNSON, David C (Editor)3 ; LIDONG CHEN (Editor)4 ; GELBSTEIN, Yaniv (Editor)5
[1] Fraunhofer Institute for Physical Measurement Techniques IPM, Freiburg, Germany
[2] General Motors R&D Center, Warren, MI, United States
[3] University of Oregon, Eugene, OR, United States
[4] Shangai Institute of Ceramics, Chinese Academy of Sciences, Shangai, China
[5] Ben-Gurion University of the Negev, Beer-Sheva, Israel - Source
Journal of electronic materials. 2010, Vol 39, Num 9, pp 1814-1817, 4 p ; ref : 10 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Single crystals crystal defects narrow-gap semiconductors thermoelectric properties
- Keyword (fr)
- Bismuth Conductivité Hall Conductivité électrique Croissance cristalline en phase fondue Densité lacune Densité porteur charge Dopage Défaut cristallin Défaut ponctuel Dépendance température Effet Seebeck Electron libre Formation défaut Mesure électrique Mobilité électron Monocristal Méthode Bridgman Paramètre cristallin Pouvoir thermoélectrique Propriété thermoélectrique Semiconducteur bande interdite étroite Structure cristalline Système ternaire Sélénium Séléniure de bismuth Thallium 6166F 7220P 8110F Bi2-xTlxSe3 Bi2Se3 Tl
- Keyword (en)
- Bismuth Hall conductivity Electrical conductivity Crystal growth from melts Vacancy density Carrier density Doping Crystal defects Point defects Temperature dependence Seebeck effect Free electron Defect formation Electrical measurement Electron mobility Monocrystals Bridgman method Lattice parameters Thermoelectric power Thermoelectric properties Narrow band gap semiconductors Crystal structure Ternary systems Selenium Bismuth selenides Thallium
- Keyword (es)
- Conductividad Hall Densidad vacuidad Doping Electrón libre Formación defecto Medida eléctrica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A66 Structure of specific crystalline solids / 001B60A66F Inorganic compounds
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20P Thermoelectric and thermomagnetic effects
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10F Growth from melts; zone melting and refining
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23415223
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s11664-010-1113-8 
https://dx.doi.org/10.1007/s11664-010-1113-8
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