Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process
- Author
- XUESONG LI1 ; MAGNUSON, Carl W1 ; LIANFENG FU3 ; VOGEL, Eric M2 ; VOELKL, Edgar3 ; COLOMBO, Luigi4 ; RUOFF, Rodney S1 ; VENUGOPAL, Archana2 ; AN, Jinho1 ; JI WON SUK1 ; BOYANG HAN1 ; BORYSIAK, Mark1 ; WEIWEI CAI1 ; VELAMAKANNI, Aruna1 ; YANWU ZHU1
[1] Department of Mechanical Engineering and the Texas Materials Institute, 1 University Station C2200, The University of Texas at Austin, Austin, Texas 78712-0292, United States
[2] Department of Electrical Engineering, The University of Texas at Dallas, Dallas, Texas, United States
[3] FEI Company, 5350 NE Dawson Creek Drive, Hillsboro, Oregon, 97124, United States
[4] Texas Instruments Incorporated, Dallas, Texas 75243, United States - Source
Nano letters (Print). 2010, Vol 10, Num 11, pp 4328-4334, 7 p ; ref : 25 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche mince Dépôt chimique phase vapeur Graphène Mesure électrique Microscopie électronique balayage transmission Microscopie électronique balayage Microscopie électronique transmission Mobilité porteur charge Mécanisme croissance Méthane Polycristal Pression partielle Spectrométrie Raman Taux croissance Transistor effet champ 8105T 8105U 8115G 8530T Substrat cuivre Substrat graphène
- Keyword (en)
- Thin films CVD Graphene Electrical measurement Scanning transmission electron microscopy Scanning electron microscopy Transmission electron microscopy Carrier mobility Growth mechanism Methane Polycrystals Partial pressure Raman spectroscopy Growth rate Field effect transistors
- Keyword (es)
- Graphene Medida eléctrica Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05T Fullerenes and related materials; diamonds, graphite
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23419987
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1021/nl101629g 
https://dx.doi.org/10.1021/nl101629g
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/nl101629g\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:85:\"Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process\";s:9:\"\u0000*\u0000jtitle\";s:20:\"Nano letters (Print)\";s:9:\"\u0000*\u0000stitle\";s:18:\"Nano lett. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"10\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"4328\";s:8:\"\u0000*\u0000epage\";s:4:\"4334\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1530-6984\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"XUESONG LI\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:14:{i:0;s:16:\"MAGNUSON, Carl W\";i:1;s:11:\"LIANFENG FU\";i:2;s:13:\"VOGEL, Eric M\";i:3;s:13:\"VOELKL, Edgar\";i:4;s:14:\"COLOMBO, Luigi\";i:5;s:15:\"RUOFF, Rodney S\";i:6;s:18:\"VENUGOPAL, Archana\";i:7;s:9:\"AN, Jinho\";i:8;s:10:\"JI WON SUK\";i:9;s:10:\"BOYANG HAN\";i:10;s:14:\"BORYSIAK, Mark\";i:11;s:10:\"WEIWEI CAI\";i:12;s:18:\"VELAMAKANNI, Aruna\";i:13;s:9:\"YANWU ZHU\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:85:\"Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/nl101629g\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:85:\"Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process\";s:9:\"\u0000*\u0000jtitle\";s:20:\"Nano letters (Print)\";s:9:\"\u0000*\u0000stitle\";s:18:\"Nano lett. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"10\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"4328\";s:8:\"\u0000*\u0000epage\";s:4:\"4334\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1530-6984\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"XUESONG LI\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:14:{i:0;s:16:\"MAGNUSON, Carl W\";i:1;s:11:\"LIANFENG FU\";i:2;s:13:\"VOGEL, Eric M\";i:3;s:13:\"VOELKL, Edgar\";i:4;s:14:\"COLOMBO, Luigi\";i:5;s:15:\"RUOFF, Rodney S\";i:6;s:18:\"VENUGOPAL, Archana\";i:7;s:9:\"AN, Jinho\";i:8;s:10:\"JI WON SUK\";i:9;s:10:\"BOYANG HAN\";i:10;s:14:\"BORYSIAK, Mark\";i:11;s:10:\"WEIWEI CAI\";i:12;s:18:\"VELAMAKANNI, Aruna\";i:13;s:9:\"YANWU ZHU\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:85:\"Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/nl101629g\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/nl101629g\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:85:\"Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process\";s:9:\"\u0000*\u0000jtitle\";s:20:\"Nano letters (Print)\";s:9:\"\u0000*\u0000stitle\";s:18:\"Nano lett. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"10\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"4328\";s:8:\"\u0000*\u0000epage\";s:4:\"4334\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1530-6984\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"XUESONG LI\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:14:{i:0;s:16:\"MAGNUSON, Carl W\";i:1;s:11:\"LIANFENG FU\";i:2;s:13:\"VOGEL, Eric M\";i:3;s:13:\"VOELKL, Edgar\";i:4;s:14:\"COLOMBO, Luigi\";i:5;s:15:\"RUOFF, Rodney S\";i:6;s:18:\"VENUGOPAL, Archana\";i:7;s:9:\"AN, Jinho\";i:8;s:10:\"JI WON SUK\";i:9;s:10:\"BOYANG HAN\";i:10;s:14:\"BORYSIAK, Mark\";i:11;s:10:\"WEIWEI CAI\";i:12;s:18:\"VELAMAKANNI, Aruna\";i:13;s:9:\"YANWU ZHU\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:85:\"Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1021\/nl101629g\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:85:\"Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process\";s:9:\"\u0000*\u0000jtitle\";s:20:\"Nano letters (Print)\";s:9:\"\u0000*\u0000stitle\";s:18:\"Nano lett. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2010\";s:9:\"\u0000*\u0000volume\";s:2:\"10\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"4328\";s:8:\"\u0000*\u0000epage\";s:4:\"4334\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1530-6984\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"XUESONG LI\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:14:{i:0;s:16:\"MAGNUSON, Carl W\";i:1;s:11:\"LIANFENG FU\";i:2;s:13:\"VOGEL, Eric M\";i:3;s:13:\"VOELKL, Edgar\";i:4;s:14:\"COLOMBO, Luigi\";i:5;s:15:\"RUOFF, Rodney S\";i:6;s:18:\"VENUGOPAL, Archana\";i:7;s:9:\"AN, Jinho\";i:8;s:10:\"JI WON SUK\";i:9;s:10:\"BOYANG HAN\";i:10;s:14:\"BORYSIAK, Mark\";i:11;s:10:\"WEIWEI CAI\";i:12;s:18:\"VELAMAKANNI, Aruna\";i:13;s:9:\"YANWU ZHU\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:85:\"Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process\";s:8:\"\u0000*\u0000place\";s:14:\"Washington, DC\";s:6:\"\u0000*\u0000pub\";s:25:\"American Chemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
