Self-assembly of three-dimensional Au inductors on silicon
- Author
- KIZIROGLOU, M. E1 ; MUKHERJEE, A. G1 ; VATTI, S1 ; HOLMES, A. S1 ; PAPAVASSILIOU, C1 ; YEATMAN, E. M1
[1] Department of Electrical and Electronic Engineering, Imperial College London, SW7 2AZ, United Kingdom - Source
IET microwaves, antennas & propagation (Print). 2010, Vol 4, Num 11, pp 1698-1703, 6 p ; ref : 22 ref
- ISSN
- 1751-8725
- Scientific domain
- Electronics; Telecommunications
- Publisher
- Institution of Engineering and Technology, Stevenage
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Autoassemblage Bobine inductance Compatibilité Facteur qualité élevé Facteur qualité Haute fréquence Interaction électromagnétique Modèle 3 dimensions Reproductibilité Surface plane Technologie MOS complémentaire Tension superficielle
- Keyword (en)
- Self assembly Inductor Compatibility High Q factor Q factor High frequency Electromagnetic interaction Three dimensional model Reproducibility Plane surface Complementary MOS technology Surface tension
- Keyword (es)
- Autoensamble Bobina inductancia Compatibilidad Factor alta calidad Factor calidad Alta frecuencia Interacción electromagnética Modelo 3 dimensiones Reproductividad Superficie plana Tecnología MOS complementario Tensión superficial
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F10 Magnetic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23451298
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/iet-map.2009.0442 
https://dx.doi.org/10.1049/iet-map.2009.0442
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