Modulation spectroscopy on metamorphic InAs quantum dots
- Author
- LIN, E. Y1 ; CHEN, C. Y1 ; TZENG, T. E1 ; CHEN, S. L1 ; FENG, David J. Y2 ; LAY, T. S1
[1] Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan, Province of China
[2] Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung, Taiwan, Province of China - Conference title
- Proceedings of the 14th International Conference on Modulated Semiconductor Structures (MSS14)
- Conference name
- International Conference on Modulated Semiconductor Structures (MSS14) (MSS14) (14 ; Kobe 2009-07-19)
- Author (monograph)
- OHNO, Hideo (Editor)1 ; WOO, Jong-Chun (Editor)2 ; YOSHINO, Junji (Editor)3 ; HIRAKAWA, Kazuhiko (Editor)4 ; MOTOHISA, Junichi (Editor)5
[1] Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
[2] Seoul National University, Seoul 151-747, Korea, Republic of
[3] Department of Physics, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8551, Japan
[4] Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
[5] Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Kita-ku, Sapporo 060-0814, Hokkaido, Japan - Source
Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2544-2547, 4 p ; ref : 12 ref
- ISSN
- 1386-9477
- Scientific domain
- Crystallography; Electronics; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Electro-absorption Electro-renectance Molecular beam epitaxy Photo-reflectance Quantum dots
- Keyword (fr)
- Arséniure d'indium Composé III-V Effet champ électrique Epitaxie jet moléculaire Etat excité Etat fondamental Facteur réflexion Indice réfraction Microscopie force atomique Microscopie électronique transmission Mouillabilité Mouillage Nanomatériau Point quantique Propriété optique Semiconducteur III-V Spectre réflexion Transition optique 7840R 8107B 8107T 8535B Substrat GaAs
- Keyword (en)
- Indium arsenides III-V compound Electric field effects Molecular beam epitaxy Excited states Ground states Reflectivity Refractive index Atomic force microscopy Transmission electron microscopy Wettability Wetting Nanostructured materials Quantum dots Optical properties III-V semiconductors Reflection spectrum Optical transition
- Keyword (es)
- Compuesto III-V Espectro reflexión Transición óptica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H40 Visible and ultraviolet spectra / 001B70H40R Fullerenes and related materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07B Nanocrystalline materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23454008
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physe.2010.04.005 
https://dx.doi.org/10.1016/j.physe.2010.04.005
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