In-plane anisotropy of tunneling magnetoresistance and spin polarization in lateral spin injection devices with (Ga,Mn)As/GaAs spin-Esaki diode contacts
- Author
- CIORGA, M1 ; EINWANGER, A1 ; WURSTBAUER, U1 ; SCHUH, D1 ; WEGSCHEIDER, W1 ; WEISS, D1
[1] Experimentelle und Angewandte Physik, University of Regensburg, 93040 Regensburg, Germany - Conference title
- Proceedings of the 14th International Conference on Modulated Semiconductor Structures (MSS14)
- Conference name
- International Conference on Modulated Semiconductor Structures (MSS14) (MSS14) (14 ; Kobe 2009-07-19)
- Author (monograph)
- OHNO, Hideo (Editor)1 ; WOO, Jong-Chun (Editor)2 ; YOSHINO, Junji (Editor)3 ; HIRAKAWA, Kazuhiko (Editor)4 ; MOTOHISA, Junichi (Editor)5
[1] Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
[2] Seoul National University, Seoul 151-747, Korea, Republic of
[3] Department of Physics, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8551, Japan
[4] Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
[5] Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Kita-ku, Sapporo 060-0814, Hokkaido, Japan - Source
Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2673-2675, 3 p ; ref : 17 ref
- ISSN
- 1386-9477
- Scientific domain
- Crystallography; Electronics; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Spin injection Spin-Esaki-Zener diode TAMR TASP
- Keyword (fr)
- Anisotropie Arséniure de gallium Commutation Composé III-V Diode Injection spin Magnétorésistance effet tunnel Plan expérience Polarisation spin Semiconducteur III-V 8530K As Ga Mn
- Keyword (en)
- Anisotropy Gallium arsenides Switching III-V compound Diode Spin injection Tunnelling magnetoresistance Experimental design Spin polarization III-V semiconductors
- Keyword (es)
- Anisotropía Conmutación Compuesto III-V Diodo Plan experiencia Polarización spin
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23454041
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physe.2010.04.004 
https://dx.doi.org/10.1016/j.physe.2010.04.004
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