Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p-i-n junction diode
- Author
- MEHTA, Minisha1 ; REUTER, Dirk2 ; MELNIKOV, Alexander2 ; WIECK, Andreas D2 ; MICHAELIS DE VASCONCELLOS, Steffen1 ; BAUMGARTEN, Tim1 ; ZRENNER, Artur1 ; MEIER, Cedrik1
[1] Physics Department and Center for Optoelectronics and Photonics Paderborn (CeOPP), University of Poderborn, Warburger Str. 100, 33098 Paderborn, Germany
[2] Applied Solid State Physics, Ruhr-University of Bochum, Universitätsstrasse 150, 44780 Bochum, Germany - Conference title
- Proceedings of the 14th International Conference on Modulated Semiconductor Structures (MSS14)
- Conference name
- International Conference on Modulated Semiconductor Structures (MSS14) (MSS14) (14 ; Kobe 2009-07-19)
- Author (monograph)
- OHNO, Hideo (Editor)1 ; WOO, Jong-Chun (Editor)2 ; YOSHINO, Junji (Editor)3 ; HIRAKAWA, Kazuhiko (Editor)4 ; MOTOHISA, Junichi (Editor)5
[1] Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
[2] Seoul National University, Seoul 151-747, Korea, Republic of
[3] Department of Physics, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8551, Japan
[4] Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
[5] Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Kita-ku, Sapporo 060-0814, Hokkaido, Japan - Source
Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2749-2752, 4 p ; ref : 13 ref
- ISSN
- 1386-9477
- Scientific domain
- Crystallography; Electronics; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Electroluminescence Focused ion beam Molecular beam epitaxy Self-assembled quantum dot
- Keyword (fr)
- Arséniure d'indium Arséniure de gallium Autoassemblage Composé III-V Croissance sélective Diode couche intrinsèque Electroluminescence Epitaxie jet moléculaire Etat excité Faisceau ion Implantation ion Jonction p i n Mécanisme croissance Nanomatériau Point quantique Recombinaison radiative Recuit Réseau(arrangement) Semiconducteur III-V Synthèse nanomatériau Sélectivité Transition interbande Ultravide Vide poussé 8107B 8107T 8116D 8535B Substrat GaAs
- Keyword (en)
- Indium arsenides Gallium arsenides Self-assembly III-V compound Selective growth p i n diodes Electroluminescence Molecular beam epitaxy Excited states Ion beams Ion implantation p i n junctions Growth mechanism Nanostructured materials Quantum dots Radiative recombination Annealing Arrays III-V semiconductors Nanomaterial synthesis Selectivity Interband transitions Ultrahigh vacuum High vacuum
- Keyword (es)
- Compuesto III-V Mecanismo crecimiento Recombinación radiativa Síntesis nanomaterial Selectividad
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07B Nanocrystalline materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication / 001B80A16D Self-assembly
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23454060
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physe.2009.12.053 
https://dx.doi.org/10.1016/j.physe.2009.12.053
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