Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes
- Author
- FARRELL, R. M2 ; HAEGER, D. A1 ; SPECK, J. S1 ; NAKAMURA, S1 2 ; CHEN, X2 ; IZA, M1 ; HIRAI, A1 ; KELCHNER, K. M2 ; FUJITO, K3 ; CHAKRABORTY, A1 ; KELLER, S2 ; DENBAARS, S. P1 2
[1] Materials Department, University of California, Santa Barbara, CA 93106, United States
[2] Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, United States
[3] Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan - Source
Journal of crystal growth. 2010, Vol 313, Num 1, pp 1-7, 7 p ; ref : 32 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- A1. Crystal morphology A3. Metalorganic chemical vapor deposition B1. Nitrides B2. Semiconducting III-V materials B3. Light emitting diodes
- Keyword (fr)
- Addition silicium Composé III-V Couche mince Densité élevée Diode électroluminescente Dispositif optoélectronique Electroluminescence Etat surface Indium Largeur raie Morphologie cristalline Morphologie surface Mécanisme croissance Méthode MOCVD Nanomatériau Nitrure d'indium Nitrure de gallium Propriété optique Puissance sortie Puits quantique Semiconducteur III-V Silicium 7820 8110A 8115G 8560J GaN In InGaN Si Substrat GaN
- Keyword (en)
- Silicon additions III-V compound Thin films High density Light emitting diodes Optoelectronic devices Electroluminescence Surface states Indium Line widths Crystal morphology Surface morphology Growth mechanism MOCVD Nanostructured materials Indium nitride Gallium nitride Optical properties Output power Quantum wells III-V semiconductors Silicon
- Keyword (es)
- Compuesto III-V Densidad elevada Mecanismo crecimiento Indio nitruro Galio nitruro Potencia salida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23504215
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2010.08.060 
https://dx.doi.org/10.1016/j.jcrysgro.2010.08.060
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