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Boron nitride nanotubes

Author
CHUNYI ZHI1 ; BANDO, Yoshio1 ; CHENGCHUN TANG1 ; GOLBERG, Dmitri1
[1] International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
Conference title
IEEE International NanoElectronics Conference, 3-8 January 2010, City University of Hong Kong
Conference name
INEC IEEE International NanoElectronics Conference (3 ; Hong Kong 2010-01-03)
Author (monograph)
CHU, Paul K (Editor)1
Institute of Electrical and Electronics Engineers (IEEE), New York, NY, United States (Organiser of meeting)
[1] City University of Hong Kong, Hong Kong, Hong-Kong
Source

Materials science & engineering. R, Reports. 2010, Vol 70, Num 3-6, pp 92-111, 20 p ; ref : 402 ref

ISSN
0927-796X
Scientific domain
Crystallography; Mechanics acoustics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
Applications BN nanotubes Chemical modification Physical properties Synthesis
Keyword (fr)
Article synthèse Bande interdite Biocompatibilité Conductivité thermique Dispersion Disruption Emission optique Fonctionnalisation Interaction faible Liaison covalente Matériau composite Modification chimique Mécanisme croissance Nanomatériau Nanotube carbone Nitrure de bore Propriété chimique Propriété physique Propriété électronique Résistance mécanique Stockage hydrogène 6580 7321 8107B 8107D Application technologique BN
Keyword (en)
Reviews Energy gap Biocompatibility Thermal conductivity Dispersions Breakdown Light emission Functionalization Weak interactions Covalent bonds Composite materials Chemical modification Growth mechanism Nanostructured materials Carbon nanotubes Boron nitride Chemical properties Physical properties Electronic properties Mechanical strength Hydrogen storage Technological application
Keyword (es)
Biocompatibilidad Emisión óptica Funciónalización Modificación química Mecanismo crecimiento Boro nitruro Propiedad electrónica Aplicatión tecnológica
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60E Thermal properties of condensed matter / 001B60E80 Thermal properties of small particles, nanocrystals, nanotubes

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C21 Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07B Nanocrystalline materials

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07D Nanotubes

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
23734378

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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