Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs
- Author
- TAN, Lionel J. J1 ; WAI MUN SOONG2 ; DAVID, John P. R3 ; JO SHIEN NG3
[1] Avago Technologies, Singapore 109673, Singapore
[2] MIMOS Berhad, Kuala Lumpur 57000, Malaysia
[3] Department of electronic and Electrical Engineering, The University of Sheffield, S1 3JD Sheffield, United Kingdom - Source
I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 1, pp 103-106, 4 p ; ref : 16 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Dark currents GaAs dilute nitrides photodiodes
- Keyword (fr)
- Accommodation réseau Caractéristique courant tension Champ électrique Courant obscurité Diode Effet Poole Frenkel Effet tunnel Haute température Photodiode Tension polarisation Dispositif optoélectronique
- Keyword (en)
- Mismatch lattice Voltage current curve Electric field Dark current Diode Poole Frenkel effect Tunnel effect High temperature Photodiode Bias voltage Optoelectronic device
- Keyword (es)
- Acomodación red Característica corriente tensión Campo eléctrico Corriente obscuridad Diodo Efecto Poole Frenkel Efecto túnel Alta temperatura Fotodiodo Voltage polarización Dispositivo optoelectrónico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23746833
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2010.2086061 
https://dx.doi.org/10.1109/TED.2010.2086061
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