Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate
- Author
- HOCK JIN QUAH1 ; KUAN YEW CHEONG1 ; HASSAN, Zainuriah2 ; LOCKMAN, Zainovia1
[1] Energy-Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang, Malaysia
[2] School of Physics, Universiti Sains Malaysia, 11800 Minden, Pulau Pinang, Malaysia - Source
I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 1, pp 122-131, 10 p ; ref : 68 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Cerium oxide gallium nitride (GaN) interfacial layer metal-organic decomposition (MOD)
- Keyword (fr)
- Composé binaire Condensateur MOS Couche interfaciale Densité état Diffraction RX Disruption électrique Etat interface Microscopie force atomique Microscopie électronique balayage Microscopie électronique émission champ Nitrure de gallium Oxyde de cérium Oxygène Piégeage porteur charge Recuit Revêtement centrifugation Semiconducteur type n Température recuit Transformation phase 0779 CeO2 GaN Composé III-V
- Keyword (en)
- Binary compound MOS capacitor Interfacial layer Density of states X ray diffraction Electric breakdown Interface state Atomic force microscopy Scanning electron microscopy Field electron microscopy Gallium nitride Cerium oxide Oxygen Charge carrier trapping Annealing Spin-on coatings n type semiconductor Annealing temperature Phase transformation III-V compound
- Keyword (es)
- Compuesto binario Capacidad MOS Capa interfacial Densidad estado Difracción RX Disrupción eléctrica Estado interfase Microscopía fuerza atómica Microscopía electrónica barrido Microscopía electrónica emisión campo Galio nitruro Cerio óxido Oxígeno Captura portador carga Recocido Semiconductor tipo n Temperatura recocido Transformación fase Compuesto III-V
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G79 Scanning probe microscopes, components and techniques
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F09 Dielectric, amorphous and glass solid devices
- Discipline
- Electronics Metrology
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23746836
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2010.2087024 
https://dx.doi.org/10.1109/TED.2010.2087024
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