InAs nanocrystal growth on Si(100)
- Author
- MANO, T1 ; FUJIOKA, H1 ; ONO, K1 ; WATANABE, Y2 ; OSHIMA, M1
[1] Department of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113, Japan
[2] NTT Laboratories, Atsugi-shi, Kanagawa 243-01, Japan - Conference title
- ACSI-4 International Symposium on Atomically Controlled Surfaces and Interfaces
- Conference name
- ACSI-4 International Symposium on Atomically Controlled Surfaces and Interfaces (4 ; Tokyo 1997-10-27)
- Author (monograph)
- TSUDA, M (Editor)1 ; MASHITA, M (Editor)2 ; KAWAZU, A (Editor)3 ; OURA, K (Editor)4 ; OCHIAI, Y (Editor)1 ; KUDO, K (Editor)1 ; NAKAYAMA, T (Editor)1 ; HOSHINO, T (Editor)1 ; ICHIKAWA, M (Editor)5
Japan Society of Applied Physics, Japan (Funder/Sponsor)
The Ministry of Education, Science, Sports and Culture, Japan (Funder/Sponsor)
The Electrochemical Society of Japan, Japan (Funder/Sponsor)
The Surface Finishing Society of Japan, Japan (Funder/Sponsor)
The Japanese Society of Electron Microscopy, Japan (Funder/Sponsor)
The Society of Polymer Science, Japan (Funder/Sponsor)
The Japan Society for Precision Engineering, Japan (Funder/Sponsor)
Okochi Memorial Foundation, Japan (Funder/Sponsor)
The Physical Society of Japan, Japan (Funder/Sponsor)
The Chemical Society of Japan, Japan (Funder/Sponsor)
The Japan Institute of Metals, Japan (Funder/Sponsor)
The Surface Science Society of Japan, Japan (Funder/Sponsor)
The Vacuum Society of Japan, Japan (Funder/Sponsor)
The Institute of Electronics, Information and Communication Engineers (Funder/Sponsor)
Catalysis Society of Japan, Japan (Funder/Sponsor)
[1] Chiba University, Japan
[2] Toshiba
[3] University of Tokyo, Japan
[4] Osaka University, Japan
[5] JRCAT - Source
Applied surface science. 1998, Vol 130-32, pp 760-764 ; ref : 22 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Croissance cristalline Discontinuité bande Epitaxie jet moléculaire Etude expérimentale Indium arséniure Matériau semiconducteur Nanocristal Structure cristalline Structure électronique As In InAs Substrat Si Composé minéral
- Keyword (en)
- Crystal growth Band offset Molecular beam epitaxy Experimental study Indium arsenides Semiconductor materials Nanocrystal Crystal structure Electronic structure Inorganic compounds
- Keyword (es)
- Discontinuidad banda Nanocristal
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A46 Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2375085
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0169-4332(98)00150-0 
https://dx.doi.org/10.1016/S0169-4332(98)00150-0
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