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Monte Carlo simulation of the growth of metallic quantum dots

Author
BOERO, M1 ; MULHERAN, P. A2 ; INKSON, J. C1
[1] Department of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, United Kingdom
[2] Department of Physics, The University of Reading, Whitenights, Reading RG6 6AF, United Kingdom
Conference title
Micro- and Nano-Engineering MNE 97 International Conference on Micro- and Nanofabrication
Conference name
Micro- and Nano-Engineering MNE 97 International Conference on Micro- and Nanofabrication (Athens 1998-09-15)
Author (monograph)
HATZAKIS, M (Editor)1 ; GOGOLIDES, E (Editor)1
[1] NCSR Demokritos, Aghia Paraskevi, Greece
Source

Microelectronic engineering. 1998, Vol 41-42, pp 515-518 ; ref : 4 ref

CODEN
MIENEF
ISSN
0167-9317
Scientific domain
Electronics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Dispositif 1 électron Dépôt Fabrication microélectronique Métal Méthode Monte Carlo Point quantique Simulation Structure îlot Blocage Coulomb
Keyword (en)
Single electron device Deposition Microelectronic fabrication Metal Monte Carlo method Quantum dot Simulation Island structure Coulomb blockade
Keyword (es)
Dispositivo 1 electrón Depósito Fabricación microeléctrica Metal Método Monte Carlo Punto cuántico Simulación Estructura islote
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2379125

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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