Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(1 11)
- Author
- JIJUN XIONG1 ; JIANJUN TANG1 ; TING LIANG1 2 ; YONG WANG3 ; CHENYANG XUE2 ; WEILI SHI1 ; WENDONG ZHANG1 2
[1] North University of China, National Key Laboratory of Science and Technology on Electronic Test and Measurement, Taiyuan 030051, China
[2] Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China), Ministry of Education, Taiyuan 030051, China
[3] The 13th Research Institute, CETC, Shijiazhuang 050051, China - Source
Applied surface science. 2010, Vol 257, Num 4, pp 1161-1165, 5 p ; ref : 29 ref
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 61.05.C 78.35.+c 81.05.Ea 81.15.Gh 87.85.Va AFM Defects Metalorganic chemical vapor deposition Semiconducting III-V materials X-ray diffraction
- Keyword (fr)
- Composé minéral Couche tampon Croissance film Densité dislocation Diffraction RX Déformation mécanique Dépôt chimique phase vapeur Fissure Matériau amorphe hydrogéné Microscopie force atomique Méthode MOCVD Nitrure d'aluminium Nitrure de gallium Paramètre cristallin Perfection cristalline Relation dispersion phonon Réseau cristallin Réseau quadratique Semiconducteur III-V Spectre Raman Spectre phonon Structure wurtzite GaN
- Keyword (en)
- Inorganic compounds Buffer layer Film growth Dislocation density XRD Strains CVD Cracks Amorphous hydrogenated material Atomic force microscopy MOCVD Aluminium nitride Gallium nitride Lattice parameters Crystal perfection Phonon dispersion relations Crystal lattices Tetragonal lattices III-V semiconductors Raman spectra Phonon spectra Wurtzite structure
- Keyword (es)
- Capa tampón Aluminio nitruro Galio nitruro Perfección cristalina Estructura wurtzita
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55L Defects and impurities: doping, implantation, distribution, concentration, etc
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23823382
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.apsusc.2010.07.073 
https://dx.doi.org/10.1016/j.apsusc.2010.07.073
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