Thermal degradation of Ni-based Schottky contacts on 6H―SiC
- Author
- BARDA, Bohumil1 ; MACHAC, Petr1 ; CICHONN, Stanislav1 ; KUDRNOVA, Marie2
[1] Department of Solid State Engineering, Faculty of Chemical Technology, Institute of Chemical Technology, Prague, Technicka 5, 166 28 Prague, Czech Republic
[2] Central Laboratories, Institute of Chemical Technology, Prague, Technicka 5, 166 28 Prague, Czech Republic - Source
Applied surface science. 2011, Vol 257, Num 9, pp 4418-4421, 4 p ; ref : 17 ref
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Low doping level Nickel silicide Nickel Ohmic contact Schottky diode SiC
- Keyword (fr)
- Carbure de silicium Composé minéral Contact ohmique Diode barrière Schottky Métal transition Nickel C Si Ni SiC
- Keyword (en)
- Silicon carbide Inorganic compounds Ohmic contacts Schottky barrier diodes Transition elements Nickel
- Keyword (es)
- Silicio carburo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23841761
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.apsusc.2010.12.077 
https://dx.doi.org/10.1016/j.apsusc.2010.12.077
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