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Reexamination of high drift mobility a-Si:H

Author
KOCKA, J1 ; STUCHLIKOVA, H1 ; FEJFAR, A1 ; GANGULY, G2 ; SAKATA, I2 ; MATSUDA, A2 ; JUSKA, G3
[1] Institute of Physics ASCR, Cukrovarnická 10, 162 00 Prague, Czech Republic
[2] Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
[3] University of Vilnius, Sauletekio al. 9, III, K., 2054 Vilnius, Lithuania
Conference title
ICAMS 17 International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology
Conference name
ICAMS 17 International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology (17 ; Budapest 1997-08-25)
Author (monograph)
KUGLER, Sándor (Editor)1 ; STUTZMANN, Martin (Editor)2
International Union for Pure and Applied Physics, International (Funder/Sponsor)
JEOL (Europe) S.A (Funder/Sponsor)
Technical University of Budapest, Hungary (Funder/Sponsor)
Research Institute for Technical Physics (Funder/Sponsor)
Fujitsu Ltd (Funder/Sponsor)
KANEKA Co (Funder/Sponsor)
Mitsui Toatsu Chemicals Inc (Funder/Sponsor)
Sanyo Electric Co., Ltd (Funder/Sponsor)
Xerox PARC (Funder/Sponsor)
Budapest University of Economic Sciences, Hungary (Funder/Sponsor)
National Committee for Technological Development (Funder/Sponsor)
Hungarian Academy of Sciences, Hungary (Funder/Sponsor)
[1] Institute of Physics, Technical University of Budapest, Budapest, Hungary
[2] Walter Schottky Institute, Technische Universität München, 85748 Garching, Germany
Source

Journal of non-crystalline solids. 1998, Vol 227-30, pp 229-232 ; a ; ref : 10 ref

CODEN
JNCSBJ
ISSN
0022-3093
Scientific domain
Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Addition hydrogène Dépendance température Dépendance tension Etat amorphe Etude expérimentale Matériau amorphe hydrogéné Mobilité dérive Méthode temps vol Phénomène transitoire Picoseconde Silicium Tension polarisation a-Si:H
Keyword (en)
Hydrogen additions Temperature dependence Voltage dependence Amorphous state Experimental study Amorphous hydrogenated material Drift mobility Time-of-flight method Transients Picosecond Silicon Bias voltage
Keyword (es)
Movilidad deriva Picosegundo Voltage polarización
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20F Low-field transport and mobility; piezoresistance

Pacs
7220F Low-field transport and mobility; piezoresistance

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2385816

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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