Mono-crystalline Silicon Strips Grown by Liquid Phase Epitaxy for Photovoltaic Applications
- Author
- BO LI1 ; KITAI, Adrian H1
[1] Department of Engineering Physics, McMaster University, Hamilton, ON, Canada - Conference title
- Photonics North 2010 (1-3 June 2010, Niagara Falls, Canada)
- Conference name
- Photonics North 2010 (Niagara Falls 2010)
- Author (monograph)
- Schriemer, Henry P (Editor); Kleiman, Rafael N (Editor)
Ontario Photonics Industry Network, Canada (Organiser of meeting)
SPIE, United States (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7750 ; 77502N.1-77502N.7 ; ref : 9 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-8241-9
- Scientific domain
- Electronics; Energy; Metrology and instrumentation; Optics; Physics
- Publisher
- SPIE, Bellingham, Wash
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Epitaxie phase liquide Modèle marche aléatoire Oxyde Propriété électrique Silicium 0130C 42 Photonique Substrat Silicium
- Keyword (en)
- LPE Random walk model Oxides Electrical properties Silicon Photonics
- Keyword (es)
- Modelo marcha aleatoria
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00A Communication, education, history, and philosophy / 001B00A30 Physics literature and publications / 001B00A30C Conference proceedings
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics
- Discipline
- Physics : optics Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23881182
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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