Molecular dynamics simulations of the sputtering process of silicon and the homoepitaxial growth of a Si coating on silicon
- Author
- PRSKALO, A.-P1 ; SCHMAUDER, S1 ; ZIEBERT, C2 ; YE, J2 ; ULRICH, S2
[1] Institute for Materials Testing. Materials Science and Strength of Materials (IMWF), University of Stuttgart, Pfaffenwaldring 32, 70569 Stuttgart, Germany
[2] Institute for Materials Research I, Karlsruhe Institute of Technology (KIT). Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany - Conference name
- International Workshop on Computational Mechanics of Materials (19 ; 2009-09-01)
- Source
Computational materials science. 2011, Vol 50, Num 4, pp 1320-1325, 6 p ; ref : 23 ref
- ISSN
- 0927-0256
- Scientific domain
- Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Coating Film growth Molecular dynamics Silicon Sputtering
- Keyword (fr)
- Dépôt pulvérisation Energie liaison Homoépitaxie Liaison covalente Migration lacune Méthode dynamique moléculaire Orientation cristalline Potentiel interatomique Pulvérisation faisceau ionique Silicium Si Substrat silicium
- Keyword (en)
- Sputter deposition Binding energy Homoepitaxy Covalent bonds Vacancy migration Molecular dynamics method Crystal orientation Interatomic potential Ion beam sputtering Silicon
- Keyword (es)
- Homoepitaxia Migración laguna Potencial interatómico Pulverización haz iónico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23900319
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.commatsci.2010.08.006 
https://dx.doi.org/10.1016/j.commatsci.2010.08.006
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