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Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium ( 10 0)

Author
BARRIGON, E1 ; GALIANA, B2 ; REY-STOLLE, I1
[1] Instituto de Energía Solar, Universidad Politécnica de Madrid ETSI de Telecomunicación, Avda. Complutense 30, 28040 Madrid, Spain
[2] ICMM-CSIC Sor Juana Ines de la Cruz 3, 28049 Madrid, Spain
Conference title
15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)
Conference name
International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV) (ICMOVPE-XV) (15 ; Incline Village, NV 2010-05-23)
Author (monograph)
CANEAU, Catherine (Editor); KUECH, Tom (Editor)
Source

Journal of crystal growth. 2011, Vol 315, Num 1, pp 22-27, 6 p ; ref : 18 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
A1. Growth monitoring A1. Reflectance anisotropy spectroscopy A2. Metalorganic vapor phase epitaxy B1. Phosphides B2. Semiconducting germanium
Keyword (fr)
Anisotropie Condition opératoire Couche épitaxique Epitaxie phase vapeur Facteur réflexion Germanium Microscopie force atomique Morphologie Mécanisme croissance Méthode MOVPE Nucléation Phosphure d'indium Phosphure de gallium Semiconducteur Spectre réflexion 6855A 6855J 8115G 8115K GaInP Substrat germanium
Keyword (en)
Anisotropy Operating conditions Epitaxial layers VPE Reflectivity Germanium Atomic force microscopy Morphology Growth mechanism MOVPE method Nucleation Indium phosphide Gallium phosphide Semiconductor materials Reflection spectrum
Keyword (es)
Condición operatoria Mecanismo crecimiento Método MOVPE Indio fosfuro Galio fosfuro Espectro reflexión
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase

Discipline
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
23901502

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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