InP substrate evaluation by MOVPE growth of lattice matched epitaxial layers
- Author
- CEDERBERG, J. G1 ; OVERBERG, M. E1
[1] Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185, United States - Conference title
- 15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)
- Conference name
- International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV) (ICMOVPE-XV) (15 ; Incline Village, NV 2010-05-23)
- Author (monograph)
- CANEAU, Catherine (Editor); KUECH, Tom (Editor)
- Source
Journal of crystal growth. 2011, Vol 315, Num 1, pp 48-52, 5 p ; ref : 12 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- A1. Atomic force microscopy A3. Metal-organic vapor phase epitaxy B2. Semiconducting III―V materials B2. Semiconducting indium phosphide
- Keyword (fr)
- Addition fer Addition soufre Composé III-V Couche épitaxique Densité défaut Dislocation Dispositif semiconducteur Epitaxie phase vapeur Microscopie force atomique Microscopie interférentielle Morphologie surface Mécanisme croissance Méthode MOVPE Pastille électronique Phosphure d'indium Rugosité Semiconducteur III-V 6855A 6855J 8115G 8115K GaInAs InP Substrat InP
- Keyword (en)
- Iron additions Sulfur additions III-V compound Epitaxial layers Defect density Dislocations Semiconductor devices VPE Atomic force microscopy Interference microscopy Surface morphology Growth mechanism MOVPE method Wafers Indium phosphide Roughness III-V semiconductors
- Keyword (es)
- Compuesto III-V Densidad defecto Mecanismo crecimiento Método MOVPE Indio fosfuro
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23901506
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2010.08.040 
https://dx.doi.org/10.1016/j.jcrysgro.2010.08.040
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