InAs quantum dot growth on planar InP (1 0 0) by metalorganic vapor-phase epitaxy with a thin GaAs interlayer
- Author
- JIAYUE YUAN1 ; HAO WANG1 ; VAN VELDHOVEN, René P. J1 ; NÖTZEL, Richard1
[1] COBRA Research Institute, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands - Conference title
- 15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)
- Conference name
- International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV) (ICMOVPE-XV) (15 ; Incline Village, NV 2010-05-23)
- Author (monograph)
- CANEAU, Catherine (Editor); KUECH, Tom (Editor)
- Source
Journal of crystal growth. 2011, Vol 315, Num 1, pp 102-105, 4 p ; ref : 12 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- A1. Quantum dot A3. Low pressure metalorganic vapor-phase epitaxy B1. InAs B1. InP B2. Semiconducting III―V materials
- Keyword (fr)
- Arséniure d'indium Arséniure de gallium Basse pression Composé III-V Couche intermédiaire Epitaxie phase vapeur Mécanisme croissance Méthode MOVPE Nanomatériau Phosphure d'indium Point quantique Propriété optique Semiconducteur III-V 6855A 8105E 8107 8107T GaAs InAs InP Substrat InP Substrat indium phosphure
- Keyword (en)
- Indium arsenides Gallium arsenides Low pressure III-V compound Interlayers VPE Growth mechanism MOVPE method Nanostructured materials Indium phosphide Quantum dots Optical properties III-V semiconductors
- Keyword (es)
- Compuesto III-V Mecanismo crecimiento Método MOVPE Indio fosfuro
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23901518
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2010.09.047 
https://dx.doi.org/10.1016/j.jcrysgro.2010.09.047
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