InP/AlGaInP quantum dot laser emitting at 638 nm
- Author
- SCHULZ, W.-M1 ; EICHFELDER, M1 ; ROSSBACH, R1 ; JETTER, M1 ; MICHLER, P1
[1] Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany - Conference title
- 15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)
- Conference name
- International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV) (ICMOVPE-XV) (15 ; Incline Village, NV 2010-05-23)
- Author (monograph)
- CANEAU, Catherine (Editor); KUECH, Tom (Editor)
- Source
Journal of crystal growth. 2011, Vol 315, Num 1, pp 123-126, 4 p ; ref : 20 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- A1. Low dimensional structures A3. Metalorganic vapor phase epitaxy B2. Semiconducting III―V materials B2. Semiconducting indium phosphide B3. Solid state lasers
- Keyword (fr)
- Aluminium Arséniure de gallium Autoassemblage Composé III-V Couche barrière Courant seuil Densité courant Emission optique Epitaxie phase vapeur Laser point quantique Méthode MOVPE Nanomatériau Phosphure d'indium Point quantique Puissance sortie Semiconducteur III-V Spectre visible 8105E 8107 8107T 8115G AlGaInP GaAs InP
- Keyword (en)
- Aluminium Gallium arsenides Self-assembly III-V compound Barrier layer Threshold current Current density Light emission VPE Quantum dot lasers MOVPE method Nanostructured materials Indium phosphide Quantum dots Output power III-V semiconductors Visible spectra
- Keyword (es)
- Compuesto III-V Emisión óptica Método MOVPE Indio fosfuro Potencia salida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23901523
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2010.07.018 
https://dx.doi.org/10.1016/j.jcrysgro.2010.07.018
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