On the anisotropic wafer curvature of GaN-based heterostructures on Si(1 1 0) substrates grown by MOVPE
- Autor
- MAUDER, C1 ; BOOKER, I. D1 ; JANSEN, R. H1 ; FAHLE, D1 ; BOUKIOUR, H1 ; BEHMENBURG, H1 ; RAHIMZADEH KHOSHROO, L1 ; WOITOK, J. F2 ; VESCAN, A1 ; HEUKEN, M1 3 ; KALISCH, H1
[1] Chair of Electromagnetic Theory, RWTH Aachen University, Kackertstr. 15-17, 52072 Aachen, Germany
[2] PANalytical B.V.. P.O. Box 13, 7600 AA Almelo, Netherlands
[3] AIXTRON AG, Kaiserstr. 98, 52134 Herzogenrath, Germany - Titulo de la conferencia
- 15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)
- Nombre de la conferencia
- International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV) (ICMOVPE-XV) (15 ; Incline Village, NV 2010-05-23)
- Autor ( monografía)
- CANEAU, Catherine (Editor); KUECH, Tom (Editor)
- Fuente
Journal of crystal growth. 2011, Vol 315, Num 1, pp 220-223, 4 p ; ref : 18 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave de autor
- A1. Stresses A1. X-ray diffraction A3. Metalorganic vapor phase epitaxy B1. Nitrides B2. Semiconducting III―V materials
- Palabra clave (fr)
- Accommodation réseau Anisotropie Composé III-V Contrainte traction Couche mince Courbure Croissance film Diffraction RX Effet contrainte Epitaxie phase vapeur Face cristalline Fissuration Hétérostructure Morphologie surface Mécanisme croissance Méthode MOVPE Nitrure d'aluminium Nitrure de gallium Nucléation Pastille électronique Propriété mécanique Relaxation Rugosité Semiconducteur III-V Silicium Superréseau 6855A 8105E 8115G 8115K AlN GaN Si Substrat GaN Substrat silicium
- Palabra clave (in)
- Mismatch lattice Anisotropy III-V compound Tensile stress Thin films Curvature Film growth XRD Stress effects VPE Crystal faces Cracking Heterostructures Surface morphology Growth mechanism MOVPE method Aluminium nitride Gallium nitride Nucleation Wafers Mechanical properties Relaxation Roughness III-V semiconductors Silicon Superlattices
- Palabra clave (es)
- Acomodación red Compuesto III-V Tensión traccíon Mecanismo crecimiento Método MOVPE Aluminio nitruro Galio nitruro
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Disciplina
- Physics and materials science
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 23901546
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Acceso al documento
Install on your browser
DOI
10.1016/j.jcrysgro.2010.08.049 
https://dx.doi.org/10.1016/j.jcrysgro.2010.08.049
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.jcrysgro.2010.08.049\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:103:\"On the anisotropic wafer curvature of GaN-based heterostructures on Si(1 1 0) substrates grown by MOVPE\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:3:\"315\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"220\";s:8:\"\u0000*\u0000epage\";s:3:\"223\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"MAUDER\";s:10:\"\u0000*\u0000aufirst\";s:1:\"C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:12:\"BOOKER, I. D\";i:1;s:12:\"JANSEN, R. H\";i:2;s:8:\"FAHLE, D\";i:3;s:11:\"BOUKIOUR, H\";i:4;s:13:\"BEHMENBURG, H\";i:5;s:22:\"RAHIMZADEH KHOSHROO, L\";i:6;s:12:\"WOITOK, J. F\";i:7;s:9:\"VESCAN, A\";i:8;s:9:\"HEUKEN, M\";i:9;s:10:\"KALISCH, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:78:\"15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)\";s:8:\"\u0000*\u0000title\";s:103:\"On the anisotropic wafer curvature of GaN-based heterostructures on Si(1 1 0) substrates grown by MOVPE\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Panist
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.jcrysgro.2010.08.049\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:103:\"On the anisotropic wafer curvature of GaN-based heterostructures on Si(1 1 0) substrates grown by MOVPE\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:3:\"315\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"220\";s:8:\"\u0000*\u0000epage\";s:3:\"223\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"MAUDER\";s:10:\"\u0000*\u0000aufirst\";s:1:\"C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:12:\"BOOKER, I. D\";i:1;s:12:\"JANSEN, R. H\";i:2;s:8:\"FAHLE, D\";i:3;s:11:\"BOUKIOUR, H\";i:4;s:13:\"BEHMENBURG, H\";i:5;s:22:\"RAHIMZADEH KHOSHROO, L\";i:6;s:12:\"WOITOK, J. F\";i:7;s:9:\"VESCAN, A\";i:8;s:9:\"HEUKEN, M\";i:9;s:10:\"KALISCH, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:78:\"15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)\";s:8:\"\u0000*\u0000title\";s:103:\"On the anisotropic wafer curvature of GaN-based heterostructures on Si(1 1 0) substrates grown by MOVPE\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Istex
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.jcrysgro.2010.08.049\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Acceso mediante Unpaywall
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.jcrysgro.2010.08.049\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:103:\"On the anisotropic wafer curvature of GaN-based heterostructures on Si(1 1 0) substrates grown by MOVPE\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:3:\"315\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"220\";s:8:\"\u0000*\u0000epage\";s:3:\"223\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"MAUDER\";s:10:\"\u0000*\u0000aufirst\";s:1:\"C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:12:\"BOOKER, I. D\";i:1;s:12:\"JANSEN, R. H\";i:2;s:8:\"FAHLE, D\";i:3;s:11:\"BOUKIOUR, H\";i:4;s:13:\"BEHMENBURG, H\";i:5;s:22:\"RAHIMZADEH KHOSHROO, L\";i:6;s:12:\"WOITOK, J. F\";i:7;s:9:\"VESCAN, A\";i:8;s:9:\"HEUKEN, M\";i:9;s:10:\"KALISCH, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:78:\"15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)\";s:8:\"\u0000*\u0000title\";s:103:\"On the anisotropic wafer curvature of GaN-based heterostructures on Si(1 1 0) substrates grown by MOVPE\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Europe PubMed Central
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.jcrysgro.2010.08.049\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:103:\"On the anisotropic wafer curvature of GaN-based heterostructures on Si(1 1 0) substrates grown by MOVPE\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:3:\"315\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"220\";s:8:\"\u0000*\u0000epage\";s:3:\"223\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"MAUDER\";s:10:\"\u0000*\u0000aufirst\";s:1:\"C\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:12:\"BOOKER, I. D\";i:1;s:12:\"JANSEN, R. H\";i:2;s:8:\"FAHLE, D\";i:3;s:11:\"BOUKIOUR, H\";i:4;s:13:\"BEHMENBURG, H\";i:5;s:22:\"RAHIMZADEH KHOSHROO, L\";i:6;s:12:\"WOITOK, J. F\";i:7;s:9:\"VESCAN, A\";i:8;s:9:\"HEUKEN, M\";i:9;s:10:\"KALISCH, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:78:\"15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)\";s:8:\"\u0000*\u0000title\";s:103:\"On the anisotropic wafer curvature of GaN-based heterostructures on Si(1 1 0) substrates grown by MOVPE\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante arXiv
