Influence of buffer layers on the microstructure of MOVPE grown a-plane InN
- Author
- LASKAR, Masihhur R1 ; GANGULI, Tapas2 ; KADIR, Abdul1 ; HATUI, Nirupam1 ; RAHMAN, A. A1 ; SHAH, A. P1 ; GOKHALE, M. R1 ; BHATTACHARYA, Arnab1
[1] Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
[2] Raja Ramanna Center for Advanced Technology, Indore 425013, India - Conference title
- 15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)
- Conference name
- International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV) (ICMOVPE-XV) (15 ; Incline Village, NV 2010-05-23)
- Author (monograph)
- CANEAU, Catherine (Editor); KUECH, Tom (Editor)
- Source
Journal of crystal growth. 2011, Vol 315, Num 1, pp 233-237, 5 p ; ref : 15 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- A1. High resolution X-ray diffraction A3. Metalorganic vapor phase epitaxy B1. Non-polar B2. Semiconducting III―V materials
- Keyword (fr)
- Anisotropie Bande interdite Composé III-V Composé organométallique Condition opératoire Couche tampon Couche épitaxique Densité défaut empilement Densité porteur charge Diffraction RX Epitaxie phase vapeur Etude comparative Microstructure Méthode MOVPE Nitrure d'aluminium Nitrure d'indium Nucléation Propriété électronique Semiconducteur III-V Structure bande 6855J 8105E 8115G 8115K AlN InN Substrat GaN
- Keyword (en)
- Anisotropy Energy gap III-V compound Organometallic compounds Operating conditions Buffer layer Epitaxial layers Stacking fault density Carrier density XRD VPE Comparative study Microstructure MOVPE method Aluminium nitride Indium nitride Nucleation Electronic properties III-V semiconductors Band structure
- Keyword (es)
- Compuesto III-V Condición operatoria Capa tampón Densidad defecto apilamiento Estudio comparativo Método MOVPE Aluminio nitruro Indio nitruro Propiedad electrónica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 23901549
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2010.08.019 
https://dx.doi.org/10.1016/j.jcrysgro.2010.08.019
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