The application of low-frequency glow discharge to high-rate deposition of a-Si :H
- Author
- BUDAGUAN, B. G1 ; POPOV, A. A1 ; SAZONOV, A. Yu1 ; BOSYAKOV, M. N2 ; GRUNSKY, D. I2 ; ZHUK, D. W2
[1] Moscow Institute of Electronic Technology (Technical University), Department of Materials Science, K-498 Zelenograd, Moscow 103498, Russian Federation
[2] Russian Federation Belarus State University of Informatics and Radioelectronics, Department of Technology of Radioelectronic Devices, 6 Petrusja Brovki, Minsk, 220600, Belarus - Conference title
- ICAMS 17 International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology
- Conference name
- ICAMS 17 International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology (17 ; Budapest 1997-08-25)
- Author (monograph)
- KUGLER, Sándor (Editor)1 ; STUTZMANN, Martin (Editor)2
International Union for Pure and Applied Physics, International (Funder/Sponsor)
JEOL (Europe) S.A (Funder/Sponsor)
Technical University of Budapest, Hungary (Funder/Sponsor)
Research Institute for Technical Physics (Funder/Sponsor)
Fujitsu Ltd (Funder/Sponsor)
KANEKA Co (Funder/Sponsor)
Mitsui Toatsu Chemicals Inc (Funder/Sponsor)
Sanyo Electric Co., Ltd (Funder/Sponsor)
Xerox PARC (Funder/Sponsor)
Budapest University of Economic Sciences, Hungary (Funder/Sponsor)
National Committee for Technological Development (Funder/Sponsor)
Hungarian Academy of Sciences, Hungary (Funder/Sponsor)
[1] Institute of Physics, Technical University of Budapest, Budapest, Hungary
[2] Walter Schottky Institute, Technische Universität München, 85748 Garching, Germany - Source
Journal of non-crystalline solids. 1998, Vol 227-30, pp 39-42 ; a ; ref : 15 ref
- CODEN
- JNCSBJ
- ISSN
- 0022-3093
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- Russian
- Keyword (fr)
- Basse fréquence Décharge luminescente Etat amorphe Etude expérimentale Film Matériau amorphe hydrogéné Matériau semiconducteur Mécanisme Optimisation Silicium Spectrométrie optique Spectrométrie émission Si a-Si:H Non métal
- Keyword (en)
- Low frequency Glow discharges Amorphous state Experimental study Films Amorphous hydrogenated material Semiconductor materials Mechanism Optimization Silicon Optical spectrometry Emission spectroscopy Nonmetals
- Keyword (es)
- Baja frecuencia Mecanismo Espectrometría óptica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2391975
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/S0022-3093(98)00021-0 
https://dx.doi.org/10.1016/S0022-3093(98)00021-0
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-3093(98)00021-0\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"The application of low-frequency glow discharge to high-rate deposition of a-Si :H\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:6:\"227-30\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:2:\"39\";s:8:\"\u0000*\u0000epage\";s:2:\"42\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"BUDAGUAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"B. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"POPOV, A. A\";i:1;s:14:\"SAZONOV, A. Yu\";i:2;s:14:\"BOSYAKOV, M. N\";i:3;s:13:\"GRUNSKY, D. I\";i:4;s:10:\"ZHUK, D. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"a\";s:9:\"\u0000*\u0000btitle\";s:107:\"ICAMS 17 International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology\";s:8:\"\u0000*\u0000title\";s:82:\"The application of low-frequency glow discharge to high-rate deposition of a-Si :H\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-3093(98)00021-0\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"The application of low-frequency glow discharge to high-rate deposition of a-Si :H\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:6:\"227-30\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:2:\"39\";s:8:\"\u0000*\u0000epage\";s:2:\"42\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"BUDAGUAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"B. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"POPOV, A. A\";i:1;s:14:\"SAZONOV, A. Yu\";i:2;s:14:\"BOSYAKOV, M. N\";i:3;s:13:\"GRUNSKY, D. I\";i:4;s:10:\"ZHUK, D. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"a\";s:9:\"\u0000*\u0000btitle\";s:107:\"ICAMS 17 International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology\";s:8:\"\u0000*\u0000title\";s:82:\"The application of low-frequency glow discharge to high-rate deposition of a-Si :H\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-3093(98)00021-0\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-3093(98)00021-0\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"The application of low-frequency glow discharge to high-rate deposition of a-Si :H\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:6:\"227-30\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:2:\"39\";s:8:\"\u0000*\u0000epage\";s:2:\"42\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"BUDAGUAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"B. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"POPOV, A. A\";i:1;s:14:\"SAZONOV, A. Yu\";i:2;s:14:\"BOSYAKOV, M. N\";i:3;s:13:\"GRUNSKY, D. I\";i:4;s:10:\"ZHUK, D. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"a\";s:9:\"\u0000*\u0000btitle\";s:107:\"ICAMS 17 International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology\";s:8:\"\u0000*\u0000title\";s:82:\"The application of low-frequency glow discharge to high-rate deposition of a-Si :H\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-3093(98)00021-0\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"The application of low-frequency glow discharge to high-rate deposition of a-Si :H\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:6:\"227-30\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:2:\"39\";s:8:\"\u0000*\u0000epage\";s:2:\"42\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"BUDAGUAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"B. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"POPOV, A. A\";i:1;s:14:\"SAZONOV, A. Yu\";i:2;s:14:\"BOSYAKOV, M. N\";i:3;s:13:\"GRUNSKY, D. I\";i:4;s:10:\"ZHUK, D. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"a\";s:9:\"\u0000*\u0000btitle\";s:107:\"ICAMS 17 International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology\";s:8:\"\u0000*\u0000title\";s:82:\"The application of low-frequency glow discharge to high-rate deposition of a-Si :H\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-3093(98)00021-0\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"The application of low-frequency glow discharge to high-rate deposition of a-Si :H\";s:9:\"\u0000*\u0000jtitle\";s:33:\"Journal of non-crystalline solids\";s:9:\"\u0000*\u0000stitle\";s:20:\"J. non-cryst. solids\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:6:\"227-30\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:2:\"39\";s:8:\"\u0000*\u0000epage\";s:2:\"42\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3093\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"BUDAGUAN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"B. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:11:\"POPOV, A. A\";i:1;s:14:\"SAZONOV, A. Yu\";i:2;s:14:\"BOSYAKOV, M. N\";i:3;s:13:\"GRUNSKY, D. I\";i:4;s:10:\"ZHUK, D. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JNCSBJ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"a\";s:9:\"\u0000*\u0000btitle\";s:107:\"ICAMS 17 International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology\";s:8:\"\u0000*\u0000title\";s:82:\"The application of low-frequency glow discharge to high-rate deposition of a-Si :H\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
