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Insights into surface reactions during a-sSiGe:H deposition and hydrogen plasma annealing as obtained from infrared attenuated total reflection spectroscopy

Author
NAKAGAWA, K1 ; YOSHIDA, Y1 ; MIYAZAKI, S1 ; HIROSE, M1
[1] Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739, Japan
Conference title
ICAMS 17 International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology
Conference name
ICAMS 17 International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology (17 ; Budapest 1997-08-25)
Author (monograph)
KUGLER, Sándor (Editor)1 ; STUTZMANN, Martin (Editor)2
International Union for Pure and Applied Physics, International (Funder/Sponsor)
JEOL (Europe) S.A (Funder/Sponsor)
Technical University of Budapest, Hungary (Funder/Sponsor)
Research Institute for Technical Physics (Funder/Sponsor)
Fujitsu Ltd (Funder/Sponsor)
KANEKA Co (Funder/Sponsor)
Mitsui Toatsu Chemicals Inc (Funder/Sponsor)
Sanyo Electric Co., Ltd (Funder/Sponsor)
Xerox PARC (Funder/Sponsor)
Budapest University of Economic Sciences, Hungary (Funder/Sponsor)
National Committee for Technological Development (Funder/Sponsor)
Hungarian Academy of Sciences, Hungary (Funder/Sponsor)
[1] Institute of Physics, Technical University of Budapest, Budapest, Hungary
[2] Walter Schottky Institute, Technische Universität München, 85748 Garching, Germany
Source

Journal of non-crystalline solids. 1998, Vol 227-30, pp 48-52 ; a ; ref : 17 ref

CODEN
JNCSBJ
ISSN
0022-3093
Scientific domain
Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Alliage binaire Cinétique Composition chimique Dépendance temps Dépôt plasma Etat amorphe Etude expérimentale Film Germanium alliage Liaison chimique Matériau amorphe hydrogéné Recuit Réaction surface Silicium alliage Solution solide Spectre IR Transformation Fourier Ge Si a-Si1-xGex:H Non métal
Keyword (en)
Binary alloys Kinetics Chemical composition Time dependence Plasma deposition Amorphous state Experimental study Films Germanium alloys Chemical bonds Amorphous hydrogenated material Annealing Surface reactions Silicon alloys Solid solutions Infrared spectra Fourier transformation Nonmetals
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy

Pacs
8115 Methods of deposition of films and coatings; film growth and epitaxy

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2391977

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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