Integrated Al-plug process for 0.45 μm contact/via at 420°C
- Author
- PARIKH, S1
[1] Silicon Svstems, 2300 Delaware Avenue, Santa Cruz, CA 95060, United States - Conference title
- Materials Research Society Meeting, Symposium K: Multilevel Metal Process Integration
- Conference name
- Materials Research Society Meeting, Symposium K: Multilevel Metal Process Integration (San Francisco CA 1997-04-01)
- Author (monograph)
- DIXIT, G. A (Editor)1 ; FIORDALICE, R (Editor); MOSELY, R (Editor)2
Materials Research Society, Pittsburgh, United States (Funder/Sponsor)
[1] Semiconductor Process and Device Center, Texas Instruments, Dallas, TX 75243, United States
[2] Applied Materials, Santa Clara 95054,CA, United States - Source
Thin solid films. 1998, Vol 320, Num 1, pp 58-62 ; ref : 7 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium Contact électrique Fabrication microélectronique Planarisation Rapport aspect Technologie BiCMOS Trou interconnexion
- Keyword (en)
- Aluminium Electric contact Microelectronic fabrication Planarization Aspect ratio BiCMOS technology Via hole
- Keyword (es)
- Aluminio Contacto eléctrico Fabricación microeléctrica Planarización Relación dimensional Tecnología BiCMOS Agujero interconexión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2392070
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0040-6090(97)01065-1 
https://dx.doi.org/10.1016/S0040-6090(97)01065-1
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