Initial phase of C60 deposition on Si(100) and GaAs(100) studied in situ by Raman spectroscopy
- Author
- DREWS, D1 ; ZAHN, D. R. T1
[1] Institut für Physik, TU Chemnitz, 09107 Chemnitz, Germany - Conference title
- Fullerenes and carbon based materials
- Conference name
- European Materials Research Society 1997 Meeting, Symposium A (Strasbourg 1997-06)
- Author (monograph)
- KUZMANY, H (Author of introductory parts); DELHAES, P (Author of introductory parts)
Council of Europe, Europe (Funder/Sponsor)
Commission of European Communities, Europe (Funder/Sponsor)
European Materials Research Society, Europe (Funder/Sponsor)
International Union of Materials Research Societies, International (Funder/Sponsor) - Source
Carbon (New York, NY). 1998, Vol 36, Num 5-6, pp 645-648 ; ref : 10 ref
- CODEN
- CRBNAH
- ISSN
- 0008-6223
- Scientific domain
- Chemistry; Energy; Chemical industry parachemical industry; Nanotechnologies, nanostructures, nanoobjects; Physics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Agrégat atomique Carbone Molécule Couche mince Croissance cristalline en phase vapeur Dépôt sous vide Fullerènes Spectrométrie Raman C60
- Keyword (en)
- Atomic clusters Carbon Molecules Thin films Crystal growth from vapors Vacuum deposition Fullerenes Raman spectroscopy
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05T Fullerenes and related materials; diamonds, graphite
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2398475
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/S0008-6223(98)00034-7 
https://dx.doi.org/10.1016/S0008-6223(98)00034-7
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0008-6223(98)00034-7\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:94:\"Initial phase of C60 deposition on Si(100) and GaAs(100) studied in situ by Raman spectroscopy\";s:9:\"\u0000*\u0000jtitle\";s:21:\"Carbon (New York, NY)\";s:9:\"\u0000*\u0000stitle\";s:14:\"Carbon (N. Y.)\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:2:\"36\";s:8:\"\u0000*\u0000issue\";s:3:\"5-6\";s:8:\"\u0000*\u0000spage\";s:3:\"645\";s:8:\"\u0000*\u0000epage\";s:3:\"648\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0008-6223\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"DREWS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"D\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:13:\"ZAHN, D. R. T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"CRBNAH\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:37:\"Fullerenes and carbon based materials\";s:8:\"\u0000*\u0000title\";s:94:\"Initial phase of C60 deposition on Si(100) and GaAs(100) studied in situ by Raman spectroscopy\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0008-6223(98)00034-7\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:94:\"Initial phase of C60 deposition on Si(100) and GaAs(100) studied in situ by Raman spectroscopy\";s:9:\"\u0000*\u0000jtitle\";s:21:\"Carbon (New York, NY)\";s:9:\"\u0000*\u0000stitle\";s:14:\"Carbon (N. Y.)\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:2:\"36\";s:8:\"\u0000*\u0000issue\";s:3:\"5-6\";s:8:\"\u0000*\u0000spage\";s:3:\"645\";s:8:\"\u0000*\u0000epage\";s:3:\"648\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0008-6223\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"DREWS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"D\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:13:\"ZAHN, D. R. T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"CRBNAH\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:37:\"Fullerenes and carbon based materials\";s:8:\"\u0000*\u0000title\";s:94:\"Initial phase of C60 deposition on Si(100) and GaAs(100) studied in situ by Raman spectroscopy\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0008-6223(98)00034-7\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0008-6223(98)00034-7\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:94:\"Initial phase of C60 deposition on Si(100) and GaAs(100) studied in situ by Raman spectroscopy\";s:9:\"\u0000*\u0000jtitle\";s:21:\"Carbon (New York, NY)\";s:9:\"\u0000*\u0000stitle\";s:14:\"Carbon (N. Y.)\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:2:\"36\";s:8:\"\u0000*\u0000issue\";s:3:\"5-6\";s:8:\"\u0000*\u0000spage\";s:3:\"645\";s:8:\"\u0000*\u0000epage\";s:3:\"648\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0008-6223\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"DREWS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"D\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:13:\"ZAHN, D. R. T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"CRBNAH\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:37:\"Fullerenes and carbon based materials\";s:8:\"\u0000*\u0000title\";s:94:\"Initial phase of C60 deposition on Si(100) and GaAs(100) studied in situ by Raman spectroscopy\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0008-6223(98)00034-7\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:94:\"Initial phase of C60 deposition on Si(100) and GaAs(100) studied in situ by Raman spectroscopy\";s:9:\"\u0000*\u0000jtitle\";s:21:\"Carbon (New York, NY)\";s:9:\"\u0000*\u0000stitle\";s:14:\"Carbon (N. Y.)\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:2:\"36\";s:8:\"\u0000*\u0000issue\";s:3:\"5-6\";s:8:\"\u0000*\u0000spage\";s:3:\"645\";s:8:\"\u0000*\u0000epage\";s:3:\"648\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0008-6223\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"DREWS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"D\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:13:\"ZAHN, D. R. T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"CRBNAH\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:37:\"Fullerenes and carbon based materials\";s:8:\"\u0000*\u0000title\";s:94:\"Initial phase of C60 deposition on Si(100) and GaAs(100) studied in situ by Raman spectroscopy\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0008-6223(98)00034-7\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:94:\"Initial phase of C60 deposition on Si(100) and GaAs(100) studied in situ by Raman spectroscopy\";s:9:\"\u0000*\u0000jtitle\";s:21:\"Carbon (New York, NY)\";s:9:\"\u0000*\u0000stitle\";s:14:\"Carbon (N. Y.)\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:2:\"36\";s:8:\"\u0000*\u0000issue\";s:3:\"5-6\";s:8:\"\u0000*\u0000spage\";s:3:\"645\";s:8:\"\u0000*\u0000epage\";s:3:\"648\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0008-6223\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"DREWS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"D\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:13:\"ZAHN, D. R. T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"CRBNAH\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:37:\"Fullerenes and carbon based materials\";s:8:\"\u0000*\u0000title\";s:94:\"Initial phase of C60 deposition on Si(100) and GaAs(100) studied in situ by Raman spectroscopy\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
