Growth of AlN films by magnetron sputtering
- Author
- UCHIYAMA, S1 ; ISHIGAMI, Y1 ; OHTA, M1 ; NIIGAKI, M1 ; KANA, H1 ; NAKANISHI, Y2 ; YAMAGUCHI, T2
[1] Materials Research Lab., Central Research Lab., Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-City, Shizuoka 434, Japan
[2] Research Institute of Electronics, Shizuoka University, 3-5-1 Jyohoku, Hamamatsu-City, Shizuoka 432, Japan - Conference title
- Nitride semiconductors 1997
- Conference name
- ICNS'97 International Conference on Nitride Semiconductors (2 ; Tokushima 1997-10-27)
- Author (monograph)
- HIRAMATSU, K (Editor)1 ; KISHINO, K (Editor)2 ; NAKAMURA, S (Editor)3 ; AMANO, H (Editor)4
The Japan Society of Applied Physics, Japan (Funder/Sponsor)
[1] Mie University, Japan
[2] Sophia University, Japan
[3] Nichia Chemical Industries, Japan
[4] Meijo University, Japan - Source
Journal of crystal growth. 1998, Vol 189-90, pp 448-451 ; ref : 10 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium nitrure Composé binaire Croissance cristalline en phase vapeur Diffraction RX Etude expérimentale Film Magnétron Matériau semiconducteur Pulvérisation cathodique RHEED SEM Semiconducteur III-V Al N AlN Composé minéral
- Keyword (en)
- Aluminium nitrides Binary compounds Crystal growth from vapors XRD Experimental study Films Magnetrons Semiconductor materials Cathode sputtering RHEED SEM III-V semiconductors Inorganic compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2399029
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(98)00328-5 
https://dx.doi.org/10.1016/S0022-0248(98)00328-5
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